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Enhancing and Extinguishing the Different Emission Features of 2D (EA1-xFAx)4Pb3Br10 Perovskite Films

Journal Article · · Advanced Optical Materials
 [1];  [2];  [2];  [2];  [3];  [2];  [2];  [4];  [5];  [2];  [2];  [5];  [3];  [5];  [2];  [2];  [2]
  1. University of California, Santa Barbara, CA (United States); SLAC
  2. University of California, Santa Barbara, CA (United States)
  3. Stanford University, CA (United States)
  4. SLAC National Accelerator Lab., Menlo Park, CA (United States)
  5. Northwestern University, Evanston, IL (United States)
We report 2D hybrid perovskites are attractive for optoelectronic devices. In thin films, the color of optical emission and the texture of crystalline domains are often difficult to control. Here, a method for extinguishing or enhancing different emission features is demonstrated for the family of 2D Ruddlesden–Popper perovskites (EA1-xFAx)4Pb3Br10 (EA = ethylammonium, FA = formamidinium). When grown from aqueous hydrobromic acid, crystals of (EA1-xFAx)4Pb3Br10 retain all the emission features of their parent compound, (EA)4Pb3Br10. Surpris-ingly, when grown from dimethylformamide (DMF), an emission feature, likely self-trapped exciton (STE), near 2.7 eV is missing. Extinction of this feature is correlated with DMF being incorporated between the 2D Pb-Br sheets, forming (EA1-xFAx)4Pb3Br10∙(DMF)y. Without FA, films grown from DMF form (EA)4Pb3Br10, retain little solvent, and have strong emission near 2.7 eV. Slowing the kinetics of film growth strengthens a different emission feature, likely a different type of STE, which is much broader and present in all compositions. Films of (EA1-xFAx)4Pb3Br10∙(DMF)y have large, micron-sized domains and homogeneous orientation of the semiconducting sheets, resulting in low elec-tronic disorder near the absorption edge. The ability to selectively strengthen or extinguish different emission features in films of (EA1-xFAx)4Pb3Br10∙(DMF)y reveals a pathway to tune the emission color in these compounds.
Research Organization:
Argonne National Laboratory (ANL), Lemont, IL (United States); SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States)
Sponsoring Organization:
DURIP ARO; National Defense Science and Engineering Graduate; National Science Foundation; USDOE; USDOE Office of Science (SC), Basic Energy Sciences (BES)
Grant/Contract Number:
AC02-76SF00515; SC0012541; SC0019273
OSTI ID:
1889842
Alternate ID(s):
OSTI ID: 1872166
OSTI ID: 1923089
Journal Information:
Advanced Optical Materials, Journal Name: Advanced Optical Materials Journal Issue: 17 Vol. 10; ISSN 2195-1071
Publisher:
WileyCopyright Statement
Country of Publication:
United States
Language:
English

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