Strain-tuning of transport gaps and semiconductor-to-conductor phase transition in twinned graphene

Arca, F.; Mendez, Juan P.; Ortiz, M.; Ariza, M. P.

doi:10.1016/j.actamat.2022.117987

Title: Strain-tuning of transport gaps and semiconductor-to-conductor phase transition in twinned graphene

Journal Article · Sat May 07 00:00:00 EDT 2022 · Acta Materialia

DOI:https://doi.org/10.1016/j.actamat.2022.117987· OSTI ID:1872056

^[1];

^[2];

^[3]; Ariza, M. P. ^[1]

Univ. de Sevilla (Spain)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
California Institute of Technology (CalTech), Pasadena, CA (United States)

We show, through the use of the Landauer-Büttiker (LB) formalism and a tight-binding (TB) model, that the transport gap of twinned graphene can be tuned through the application of a uniaxial strain in the direction normal to the twin band. Remarkably, we find that the transport gap E_gap bears a square-root dependence on the control parameter ϵ_x – ϵ_c, where ϵ_x is the applied uniaxial strain and ϵ_c ~ 19% is a critical strain. We interpret this dependence as evidence of criticality underlying a continuous phase transition, with ϵ_x – ϵ_c playing the role of control parameter and the transport gap E_gap playing the role of order parameter. For ϵ_x < ϵ_c, the transport gap is non-zero and the material is semiconductor, whereas for ϵ_x < ϵ_c the transport gap closes to zero and the material becomes conductor, which evinces a semiconductor-to-conductor phase transition. The computed critical exponent of 1/2 places the transition in the meanfield universality class, which enables far-reaching analogies with other systems in the same class.

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Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: NA0003525

OSTI ID:: 1872056

Report Number(s):: SAND2022-7419J; 706952

Journal Information:: Acta Materialia, Vol. 234; ISSN 1359-6454

Publisher:: ElsevierCopyright Statement

Country of Publication:: United States

Language:: English

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