Physical Compact Model for Three-Terminal SONOS Synaptic Circuit Element

Yi, Su-in; Talin, A. Alec; Marinella, Matthew J.; Williams, R. Stanley

doi:10.1002/aisy.202200070

Physical Compact Model for Three-Terminal SONOS Synaptic Circuit Element

Journal Article · Sun May 22 04:00:00 EDT 2022 · Advanced Intelligent Systems

DOI:https://doi.org/10.1002/aisy.202200070· OSTI ID:1871979

^[1]; Talin, A. Alec ^[2]; Marinella, Matthew J. ^[3]; ^[1]

Texas A & M Univ., College Station, TX (United States)
Sandia National Lab. (SNL-CA), Livermore, CA (United States)
Arizona State Univ., Tempe, AZ (United States)

A well-posed physics-based compact model for a three-terminal silicon–oxide–nitride–oxide–silicon (SONOS) synaptic circuit element is presented for use by neuromorphic circuit/system engineers. Based on technology computer aided design (TCAD) simulations of a SONOS device, the model contains a nonvolatile memristor with the state variable QM representing the memristor charge under the gate of the three-terminal element. By incorporating the exponential dependence of the memristance on QM and the applied bias V for the gate, the compact model agrees quantitatively with the results from TCAD simulations as well as experimental measurements for the drain current. The compact model is implemented through VerilogA in the circuit simulation package Cadence Spectre and reproduces the experimental training behavior for the source–drain conductance of a SONOS device after applying writing pulses ranging from –12 V to +11 V, with an accuracy higher than 90%.

View Accepted Manuscript (DOE)

Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Advanced Scientific Computing Research (ASCR); Air Force Office of Scientific Research (AFOSR)

Grant/Contract Number:: NA0003525

OSTI ID:: 1871979

Report Number(s):: SAND2022-5364J; 705514

Journal Information:: Advanced Intelligent Systems, Journal Name: Advanced Intelligent Systems Journal Issue: 9 Vol. 4; ISSN 2640-4567

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: English

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42 ENGINEERING
Compact model
Memristor
Neuromorphic
SONOS
Three-terminal synaptic device

Physical Compact Model for Three-Terminal SONOS Synaptic Circuit Element

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