In Situ Ion Counting for Improved Implanted Ion Error Rate and Silicon Vacancy Yield Uncertainty

Titze, Michael; Byeon, Heejun; Flores, Anthony; Henshaw, Jacob; Harris, C. Thomas; Mounce, Andrew M.; Bielejec, Edward S.

doi:10.1021/acs.nanolett.1c04646

In Situ Ion Counting for Improved Implanted Ion Error Rate and Silicon Vacancy Yield Uncertainty

Journal Article · Fri Apr 15 00:00:00 EDT 2022 · Nano Letters

DOI:https://doi.org/10.1021/acs.nanolett.1c04646· OSTI ID:1871967

^[1]; Byeon, Heejun ^[1]; Flores, Anthony ^[1]; Henshaw, Jacob ^[1]; Harris, C. Thomas ^[1]; Mounce, Andrew M. ^[1]; Bielejec, Edward S. ^[1]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

An in situ counted ion implantation experiment improving the error on the number of ions required to form a single optically active silicon vacancy (SiV) defect in diamond 7-fold compared to timed implantation is presented. Here, traditional timed implantation relies on a beam current measurement followed by implantation with a preset pulse duration. It is dominated by Poisson statistics, resulting in large errors for low ion numbers. Instead, our in situ detection, measuring the ion number arriving at the substrate, results in a 2-fold improvement of the error on the ion number required to generate a single SiV compared to timed implantation. Through postimplantation analysis, the error is improved 7-fold compared to timed implantation. SiVs are detected by photoluminescence spectroscopy, and the yield of 2.98% is calculated through the photoluminescence count rate. Hanbury–Brown–Twiss interferometry is performed on locations potentially hosting single-photon emitters, confirming that 82% of the locations exhibit single photon emission statistics.

View Accepted Manuscript (DOE)

Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: NA0003525

OSTI ID:: 1871967

Report Number(s):: SAND2022-3475J; 705337

Journal Information:: Nano Letters, Journal Name: Nano Letters Journal Issue: 8 Vol. 22; ISSN 1530-6984

Publisher:: American Chemical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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