Bandgap engineering of Cd1-xZnxTe1-ySey(0&lt;x&lt;0.27,0&lt;y&lt;0.026)

Park, Beomjun; Kim, Yonghoon; Seo, Jiwon; Byun, Jangwon; Dedic, V.; Franc, J.; Bolotnikov, A. E.; James, Ralph B.; Kim, Kihyun

doi:10.1016/j.nima.2022.166836

Bandgap engineering of Cd 1-x Zn x Te 1-y Se y (0<x<0.27,0<y<0.026)

Journal Article · Fri May 13 00:00:00 EDT 2022 · Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment

DOI:https://doi.org/10.1016/j.nima.2022.166836· OSTI ID:1870389

Park, Beomjun ^[1]; Kim, Yonghoon ^[1]; Seo, Jiwon ^[1]; Byun, Jangwon ^[1]; Dedic, V. ^[2]; Franc, J. ^[2]; Bolotnikov, A. E. ^[3]; James, Ralph B. ^[4]; Kim, Kihyun ^[1]

Korea Univ., Seoul, (Korea, Republic of)
Charles Univ., Prague (Czech Republic)
Brookhaven National Lab. (BNL), Upton, NY (United States)
Savannah River Site (SRS), Aiken, SC (United States). Savannah River National Lab. (SRNL)

CdZnTe (CZT) detectors with more than 10% zinc content did not show a remarkable improvement in the detector performance due to the additional defects introduced by the higher zinc content. However, recent research showed that the formation of defects was suppressed effectively by adding a small amount of selenium (2%) in CZT. On this basis, we attempted to enhance the detector performance through bandgap engineering by increasing the zinc content up to 25 %, while adding 2 % of selenium. Multiple CdZnTeSe (CZTS) ingots with Zn = 10, 12.5, 15, 20 and 25%, while fixing the Se composition at 2%, were grown by the Bridgman method. The bandgap of CZTS for the different Zn and Se contents was analyzed and then equations for predicting the bandgap for other alloy compositions were introduced. Furthermore, the crystallinity of CZTS was evaluated by photoluminescence measurements. The pulse height spectra for Am-241 and Co-57 sources were used to evaluate the detector performance for the CZTS samples.

View Accepted Manuscript (DOE)

Research Organization:: Brookhaven National Laboratory (BNL), Upton, NY (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA), Office of Defense Nuclear Nonproliferation

Grant/Contract Number:: SC0012704

OSTI ID:: 1870389

Report Number(s):: BNL-223016-2022-JAAM

Journal Information:: Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment, Journal Name: Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment Vol. 1036; ISSN 0168-9002

Publisher:: ElsevierCopyright Statement

Country of Publication:: United States

Language:: English

References (24)

CdZnTe and CdTe materials for X-ray and gamma ray radiation detector applications Szeles, Csaba physica status solidi (b), Vol. 241, Issue 3 https://doi.org/10.1002/pssb.200304296	journal	March 2004
Molecular beam epitaxial growth and characterization of Cd-based II–VI wide-bandgap compounds on Si substrates Brill, G.; Chen, Y.; Amirtharaj, P. M. Journal of Electronic Materials, Vol. 34, Issue 5 https://doi.org/10.1007/s11664-005-0080-y	journal	May 2005
Overcoming Mobility Lifetime Product Limitations in Vertical Bridgman Production of Cadmium Zinc Telluride Detectors McCoy, Jedidiah J.; Kakkireni, Saketh; Gilvey, Zachary H. Journal of Electronic Materials, Vol. 48, Issue 7 https://doi.org/10.1007/s11664-019-07196-5	journal	April 2019
Study of impurity segregation, crystallinity, and detector performance of melt-grown cadmium zinc telluride crystals Schieber, M.; Schlesinger, T. E.; James, R. B. Journal of Crystal Growth, Vol. 237-239 https://doi.org/10.1016/S0022-0248(01)02314-4	journal	April 2002
Temperature dependence of the band gap energy of crystalline CdTe Fonthal, G.; Tirado-Mejı́a, L.; Marı́n-Hurtado, J. I. Journal of Physics and Chemistry of Solids, Vol. 61, Issue 4 https://doi.org/10.1016/S0022-3697(99)00254-1	journal	April 2000
Optimal bandgap variants of Cd1−xZnxTe for high-resolution X-ray and gamma-ray spectroscopy Toney, J. E.; Schlesinger, T. E.; James, R. B. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 428, Issue 1 https://doi.org/10.1016/S0168-9002(98)01575-7	journal	June 1999
Growth and interface study of 2in diameter CdZnTe by THM technique Roy, U. N.; Weiler, S.; Stein, J. Journal of Crystal Growth, Vol. 312, Issue 19 https://doi.org/10.1016/j.jcrysgro.2010.05.046	journal	September 2010
Characterization and evaluation of extended defects in CZT crystals for gamma-ray detectors Bolotnikov, A. E.; Camarda, G. S.; Cui, Y. Journal of Crystal Growth, Vol. 379 https://doi.org/10.1016/j.jcrysgro.2013.01.048	journal	September 2013
The 1.1, 0.8 and 0.55–0.60 eV deep bands in detector-grade CdMnTe studied by photoluminescence spectroscopy Wardak, Aneta; Szot, Michał; Janusz, Gabriela Journal of Luminescence, Vol. 231 https://doi.org/10.1016/j.jlumin.2020.117833	journal	March 2021
Role of selenium addition to CdZnTe matrix for room-temperature radiation detector applications Roy, U. N.; Camarda, G. S.; Cui, Y. Scientific Reports, Vol. 9, Issue 1 https://doi.org/10.1038/s41598-018-38188-w	journal	February 2019
On the bowing parameter in Cd1−xZnxTe Zelaya-Angel, O.; Mendoza-Alvarez, J. G.; Becerril, M. Journal of Applied Physics, Vol. 95, Issue 11 https://doi.org/10.1063/1.1699493	journal	June 2004
Effects of pressure on Cd _{1− x} Zn _x Te alloys (0≤ x <0.5) Webb, A. W.; Qadri, S. B.; Carpenter, E. R. Journal of Applied Physics, Vol. 61, Issue 7 https://doi.org/10.1063/1.337922	journal	April 1987
An optical method for evaluation of the net acceptor concentration in p ‐type ZnSe Hu, B.; Yin, A.; Karczewski, G. Journal of Applied Physics, Vol. 74, Issue 6 https://doi.org/10.1063/1.354418	journal	September 1993
First-principles calculation of band offsets, optical bowings, and defects in CdS, CdSe, CdTe, and their alloys Wei, Su-Huai; Zhang, S. B.; Zunger, Alex Journal of Applied Physics, Vol. 87, Issue 3 https://doi.org/10.1063/1.372014	journal	February 2000
Characterization of large-volume Frisch grid detector fabricated from as-grown CdZnTeSe Roy, Utpal N.; Camarda, Giuseppe S.; Cui, Yonggang Applied Physics Letters, Vol. 115, Issue 24 https://doi.org/10.1063/1.5133389	journal	December 2019
Charge transport properties in CdZnTeSe semiconductor room-temperature γ -ray detectors Chaudhuri, Sandeep K.; Sajjad, Mohsin; Kleppinger, Joshua W. Journal of Applied Physics, Vol. 127, Issue 24 https://doi.org/10.1063/5.0006227	journal	June 2020
Determination of energy gap in Cd _{1- x} Zn _x Te ( x = 0-0.06) Franc, J.; Hlídek, P.; Moravec, P. Semiconductor Science and Technology, Vol. 15, Issue 6 https://doi.org/10.1088/0268-1242/15/6/313	journal	May 2000
Correlation of Space Charge Limited Current and γ-Ray Response of Cd _x Zn _1-x Te _1-y Se _y Room-Temperature Radiation Detectors Chaudhuri, Sandeep K.; Sajjad, Mohsin; Kleppinger, Joshua W. IEEE Electron Device Letters, Vol. 41, Issue 9 https://doi.org/10.1109/LED.2020.3013800	journal	September 2020
Anomalous Te Inclusion Size and Distribution in CdZnTeSe Hwang, S.; Yu, H.; Bolotnikov, A. E. IEEE Transactions on Nuclear Science, Vol. 66, Issue 11 https://doi.org/10.1109/TNS.2019.2944969	journal	November 2019
Phase Diagram of the Zn-Cd-Te Ternary System Steininger, Jacques; Strauss, Alan J.; Brebrick, Robert F. Journal of The Electrochemical Society, Vol. 117, Issue 10 https://doi.org/10.1149/1.2407297	journal	January 1970
Review of CdTe1−xSex Thin Films in Solar Cell Applications Lingg, Martina; Buecheler, Stephan; Tiwari, Ayodhya N. Coatings, Vol. 9, Issue 8, p. 520 https://doi.org/10.3390/coatings9080520	journal	August 2019
Quaternary Semiconductor Cd1−xZnxTe1−ySey for High-Resolution, Room-Temperature Gamma-Ray Detection Chaudhuri, Sandeep K.; Kleppinger, Joshua W.; Karadavut, OmerFaruk Crystals, Vol. 11, Issue 7 https://doi.org/10.3390/cryst11070827	journal	July 2021
Advances in CdZnTeSe for Radiation Detector Applications Roy, Utpal N.; Camarda, Giuseppe S.; Cui, Yonggang Radiation, Vol. 1, Issue 2 https://doi.org/10.3390/radiation1020011	journal	April 2021
New insight into the 1.1-eV trap level in CdTe-based semiconductor Kim, K. H.; Choi, J. H.; Bolotnikov, A. E. Journal of the Korean Physical Society, Vol. 62, Issue 4 https://doi.org/10.3938/jkps.62.623	journal	February 2013

Similar Records

Correlations for the specific heat capacity of (UxPu1-x)1-yGdyO2-z derived from molecular dynamics

Journal Article · Wed Aug 31 20:00:00 EDT 2022 · Journal of Nuclear Materials · OSTI ID:1889993

Charge Transport and Space-Charge Formation in Cd1-xZnxTe1-ySey Radiation Detectors

Journal Article · Tue May 25 20:00:00 EDT 2021 · Physical Review Applied · OSTI ID:1863797

Role of Selenium in CdZnTeSe as a Defect Engineering Agent

Book · Thu Aug 22 00:00:00 EDT 2024 · OSTI ID:2999061

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
Bandgap engineering
CdZnTeSe
Defects
Energy resolution enhancement
Pulse height spectra

Bandgap engineering of Cd 1-x Zn x Te 1-y Se y (0<x<0.27,0<y<0.026)

Citation Formats

References (24)

Similar Records

Related Subjects