Bandgap engineering of Cd1-xZnxTe1-ySey(0<x<0.27,0<y<0.026)

Park, Beomjun; Kim, Yonghoon; Seo, Jiwon; Byun, Jangwon; Dedic, V.; Franc, J.; Bolotnikov, A. E.; James, Ralph B.; Kim, Kihyun

doi:10.1016/j.nima.2022.166836

Title: Bandgap engineering of Cd 1 - x Zn x Te 1 - y Se y ( 0 < x < 0 . 27 , 0 < y < 0 . 026 )

Abstract

CdZnTe (CZT) detectors with more than 10% zinc content did not show a remarkable improvement in the detector performance due to the additional defects introduced by the higher zinc content. However, recent research showed that the formation of defects was suppressed effectively by adding a small amount of selenium (2%) in CZT. On this basis, we attempted to enhance the detector performance through bandgap engineering by increasing the zinc content up to 25 %, while adding 2 % of selenium. Multiple CdZnTeSe (CZTS) ingots with Zn = 10, 12.5, 15, 20 and 25%, while fixing the Se composition at 2%, were grown by the Bridgman method. The bandgap of CZTS for the different Zn and Se contents was analyzed and then equations for predicting the bandgap for other alloy compositions were introduced. Furthermore, the crystallinity of CZTS was evaluated by photoluminescence measurements. The pulse height spectra for Am-241 and Co-57 sources were used to evaluate the detector performance for the CZTS samples.

Authors:

Park, Beomjun ^[1]; Kim, Yonghoon ^[1]; Seo, Jiwon ^[1]; Byun, Jangwon ^[1]; Dedic, V. ^[2]; Franc, J. ^[2]; Bolotnikov, A. E. ^[3]; James, Ralph B. ^[4]; Kim, Kihyun ^[1]

Korea Univ., Seoul, (Korea, Republic of)
Charles Univ., Prague (Czech Republic)
Brookhaven National Lab. (BNL), Upton, NY (United States)
Savannah River Site (SRS), Aiken, SC (United States). Savannah River National Lab. (SRNL)

Publication Date:: Fri May 13 00:00:00 EDT 2022

Research Org.:: Brookhaven National Lab. (BNL), Upton, NY (United States)

Sponsoring Org.:: USDOE National Nuclear Security Administration (NNSA), Office of Defense Nuclear Nonproliferation

OSTI Identifier:: 1870389

Report Number(s):: BNL-223016-2022-JAAM
Journal ID: ISSN 0168-9002; TRN: US2306522

Grant/Contract Number:: SC0012704

Resource Type:: Journal Article: Accepted Manuscript

Journal Name:: Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment

Additional Journal Information:: Journal Volume: 1036; Journal ID: ISSN 0168-9002

Publisher:: Elsevier

Country of Publication:: United States

Language:: English

Subject:: 46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; Bandgap engineering; CdZnTeSe; Pulse height spectra; Energy resolution enhancement; Defects

Citation Formats


                    Park, Beomjun, Kim, Yonghoon, Seo, Jiwon, Byun, Jangwon, Dedic, V., Franc, J., Bolotnikov, A. E., James, Ralph B., and Kim, Kihyun. Bandgap engineering of Cd1-xZnxTe1-ySey(0<x<0.27,0<y<0.026).  United States: N. p., 2022. 
        Web.  doi:10.1016/j.nima.2022.166836.

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                    Park, Beomjun, Kim, Yonghoon, Seo, Jiwon, Byun, Jangwon, Dedic, V., Franc, J., Bolotnikov, A. E., James, Ralph B., & Kim, Kihyun. Bandgap engineering of Cd1-xZnxTe1-ySey(0<x<0.27,0<y<0.026).  United States.  https://doi.org/10.1016/j.nima.2022.166836

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                    Park, Beomjun, Kim, Yonghoon, Seo, Jiwon, Byun, Jangwon, Dedic, V., Franc, J., Bolotnikov, A. E., James, Ralph B., and Kim, Kihyun. 2022.  
        "Bandgap engineering of Cd1-xZnxTe1-ySey(0<x<0.27,0<y<0.026)".  United States.  https://doi.org/10.1016/j.nima.2022.166836.  https://www.osti.gov/servlets/purl/1870389.

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@article{osti_1870389,

  title        = {Bandgap engineering of Cd1-xZnxTe1-ySey(0<x<0.27,0<y<0.026)},

  author       = {Park, Beomjun and Kim, Yonghoon and Seo, Jiwon and Byun, Jangwon and Dedic, V. and Franc, J. and Bolotnikov, A. E. and James, Ralph B. and Kim, Kihyun},

  abstractNote = {CdZnTe (CZT) detectors with more than 10% zinc content did not show a remarkable improvement in the detector performance due to the additional defects introduced by the higher zinc content. However, recent research showed that the formation of defects was suppressed effectively by adding a small amount of selenium (2%) in CZT. On this basis, we attempted to enhance the detector performance through bandgap engineering by increasing the zinc content up to 25 %, while adding 2 % of selenium. Multiple CdZnTeSe (CZTS) ingots with Zn = 10, 12.5, 15, 20 and 25%, while fixing the Se composition at 2%, were grown by the Bridgman method. The bandgap of CZTS for the different Zn and Se contents was analyzed and then equations for predicting the bandgap for other alloy compositions were introduced. Furthermore, the crystallinity of CZTS was evaluated by photoluminescence measurements. The pulse height spectra for Am-241 and Co-57 sources were used to evaluate the detector performance for the CZTS samples.},

  doi          = {10.1016/j.nima.2022.166836},

  url          = {https://www.osti.gov/biblio/1870389},
  journal      = {Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment},

  issn         = {0168-9002},

  number       = ,

  volume       = 1036,

  place        = {United States},

  year         = {Fri May 13 00:00:00 EDT 2022},

  month        = {Fri May 13 00:00:00 EDT 2022}

}

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Similar Records

Title: Bandgap engineering of Cd 1 - x Zn x Te 1 - y Se y ( 0 < x < 0 . 27 , 0 < y < 0 . 026 )

Abstract

Citation Formats

Quaternary Semiconductor Cd1−xZnxTe1−ySey for High-Resolution, Room-Temperature Gamma-Ray Detection journal, July 2021

Characterization and evaluation of extended defects in CZT crystals for gamma-ray detectors journal, September 2013

Optimal bandgap variants of Cd1−xZnxTe for high-resolution X-ray and gamma-ray spectroscopy journal, June 1999

Anomalous Te Inclusion Size and Distribution in CdZnTeSe journal, November 2019

First-principles calculation of band offsets, optical bowings, and defects in CdS, CdSe, CdTe, and their alloys journal, February 2000

An optical method for evaluation of the net acceptor concentration in p ‐type ZnSe journal, September 1993

Role of selenium addition to CdZnTe matrix for room-temperature radiation detector applications journal, February 2019

Study of impurity segregation, crystallinity, and detector performance of melt-grown cadmium zinc telluride crystals journal, April 2002

CdZnTe and CdTe materials for X-ray and gamma ray radiation detector applications journal, March 2004

Characterization of large-volume Frisch grid detector fabricated from as-grown CdZnTeSe journal, December 2019

Charge transport properties in CdZnTeSe semiconductor room-temperature γ -ray detectors journal, June 2020

Temperature dependence of the band gap energy of crystalline CdTe journal, April 2000

On the bowing parameter in Cd1−xZnxTe journal, June 2004

The 1.1, 0.8 and 0.55–0.60 eV deep bands in detector-grade CdMnTe studied by photoluminescence spectroscopy journal, March 2021

Phase Diagram of the Zn-Cd-Te Ternary System journal, January 1970

Growth and interface study of 2in diameter CdZnTe by THM technique journal, September 2010

Effects of pressure on Cd 1− x Zn x Te alloys (0≤ x <0.5) journal, April 1987

Overcoming Mobility Lifetime Product Limitations in Vertical Bridgman Production of Cadmium Zinc Telluride Detectors journal, April 2019

Molecular beam epitaxial growth and characterization of Cd-based II–VI wide-bandgap compounds on Si substrates journal, May 2005

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Advances in CdZnTeSe for Radiation Detector Applications journal, April 2021

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Correlation of Space Charge Limited Current and γ-Ray Response of Cd x Zn 1-x Te 1-y Se y Room-Temperature Radiation Detectors journal, September 2020

Quaternary Semiconductor Cd1−xZnxTe1−ySey for High-Resolution, Room-Temperature Gamma-Ray Detection
journal, July 2021

Characterization and evaluation of extended defects in CZT crystals for gamma-ray detectors
journal, September 2013

Optimal bandgap variants of Cd1−xZnxTe for high-resolution X-ray and gamma-ray spectroscopy
journal, June 1999

Anomalous Te Inclusion Size and Distribution in CdZnTeSe
journal, November 2019

First-principles calculation of band offsets, optical bowings, and defects in CdS, CdSe, CdTe, and their alloys
journal, February 2000

An optical method for evaluation of the net acceptor concentration in p ‐type ZnSe
journal, September 1993

Role of selenium addition to CdZnTe matrix for room-temperature radiation detector applications
journal, February 2019

Study of impurity segregation, crystallinity, and detector performance of melt-grown cadmium zinc telluride crystals
journal, April 2002

CdZnTe and CdTe materials for X-ray and gamma ray radiation detector applications
journal, March 2004

Characterization of large-volume Frisch grid detector fabricated from as-grown CdZnTeSe
journal, December 2019

Charge transport properties in CdZnTeSe semiconductor room-temperature γ -ray detectors
journal, June 2020

Temperature dependence of the band gap energy of crystalline CdTe
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On the bowing parameter in Cd1−xZnxTe
journal, June 2004

The 1.1, 0.8 and 0.55–0.60 eV deep bands in detector-grade CdMnTe studied by photoluminescence spectroscopy
journal, March 2021

Phase Diagram of the Zn-Cd-Te Ternary System
journal, January 1970

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Effects of pressure on Cd _{1− x} Zn _x Te alloys (0≤ x <0.5)
journal, April 1987

Overcoming Mobility Lifetime Product Limitations in Vertical Bridgman Production of Cadmium Zinc Telluride Detectors
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