Molecular dynamics study of silicon atomic layer etching by chlorine gas and argon ions

Vella, Joseph R.; Humbird, David; Graves, David B.

doi:10.1116/6.0001681

Molecular dynamics study of silicon atomic layer etching by chlorine gas and argon ions

Journal Article · Thu Feb 10 00:00:00 EST 2022 · Journal of Vacuum Science and Technology B

DOI:https://doi.org/10.1116/6.0001681· OSTI ID:1869944

^[1]; Humbird, David ^[2]; ^[3]

Princeton Plasma Physics Lab. (PPPL), Princeton, NJ (United States)
DWH Consulting, Centennial, CO (United States)
Princeton Plasma Physics Lab. (PPPL), Princeton, NJ (United States); Princeton Univ., NJ (United States)

Classical molecular dynamics (MD) is used to simulate atomic layer etching processes of silicon by alternating exposure to chlorine gas and argon ions. In order to validate our model, a rigorous comparison is done with ion beam experiments found in the literature [Park et al., Jpn. J. Appl. Phys. 44, 389 (2005)]. Here it is shown that the etch per cycle (EPC) as a function of argon ion energy from simulations is in quantitative agreement with experimental results if the correct argon ion fluence is used in the simulations. The EPC as a function of ion irradiation time and amount of chlorine exposure also show good agreement with the experiment. The MD simulations also show the formation of an amorphous silicon region with chlorine atoms mixed uniformly throughout following ion bombardment. Finally, the etch products during the ion irradiation step are analyzed and discussed.

View Accepted Manuscript (DOE)

Research Organization:: Princeton Plasma Physics Laboratory (PPPL), Princeton, NJ (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Fusion Energy Sciences (FES)

Grant/Contract Number:: AC02-09CH11466

OSTI ID:: 1869944

Journal Information:: Journal of Vacuum Science and Technology B, Journal Name: Journal of Vacuum Science and Technology B Journal Issue: 2 Vol. 40; ISSN 2166-2746

Publisher:: American Vacuum Society / AIPCopyright Statement

Country of Publication:: United States

Language:: English

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