Insulating antiferromagnetism in VTe
Journal Article
·
· Physical Review. B
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Ames Lab., and Iowa State Univ., Ames, IA (United States)
Here, we report a detailed theoretical and experimental study on the vanadium monotelluride VTe, which crystallizes in the NiAs hexagonal structure. First-principles calculations reveal a complex hierarchy of magnetic interactions and energy scales, with the ground state theoretically determined as an ($$\frac{1}{2}$$, 0, $$\frac{1}{2}$$) antiferromagnetic ordering with insulating character and a band gap of 0.5 eV. Experimental synthesis and characterization efforts find a substantially off-stoichiometric orthorhombic structure (a defect NiAs structure) with composition V0.85Te, and an apparent Néel point of some 45 K. First-principles calculations find good agreement with the observed Néel point. We also give an extended examination of the effects of off-stoichiometry on the calculated energetics, finding significant volume-related effects. Our first-principles calculations find the stoichiometric phase VTe to have a negative vanadium defect formation energy of over 1 eV, thus explaining the formation of the off-stoichiometric phase. Finally, we provide a structural explanation for the formation of defect structures in this and numerous other NiAs-structure materials.
- Research Organization:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division
- Grant/Contract Number:
- AC05-00OR22725
- OSTI ID:
- 1869135
- Journal Information:
- Physical Review. B, Journal Name: Physical Review. B Journal Issue: 17 Vol. 105; ISSN 2469-9950
- Publisher:
- American Physical Society (APS)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
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