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Extraordinary role of Zn in enhancing thermoelectric performance of Ga-doped n-type PbTe

Journal Article · · Energy & Environmental Science
DOI:https://doi.org/10.1039/d1ee02986j· OSTI ID:1867598
 [1];  [2];  [2];  [3];  [4];  [5];  [6];  [3];  [2];  [2];  [7];  [8];  [2]
  1. Fuzhou Univ. (China); Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian (China); Nanyang Technological Univ. (Singapore); Northwestern Univ., Evanston, IL (United States); Northwestern University
  2. Northwestern Univ., Evanston, IL (United States)
  3. Univ. of Michigan, Ann Arbor, MI (United States)
  4. Nanyang Technological Univ. (Singapore); Northwestern Univ., Evanston, IL (United States); Huazhong Univ. of Science and Technology, Wuhan (China)
  5. Fuzhou Univ. (China); Nanjing Univ. (China)
  6. Fuzhou Univ. (China); Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian (China)
  7. Fuzhou Univ. (China); Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian (China); Nanjing Univ. (China)
  8. Nanyang Technological Univ. (Singapore)
+ Show Author Affiliations
Although Ga doping can weaken the electron phonon coupling in n-type PbTe, Ga-doped PbTe has a relatively low carrier concentration (n) and high lattice thermal conductivity (κlat), resulting in a lower figure of merit (ZT) compared with those of other top-performing n-type PbTe-based thermoelectric materials. Herein, we report the extraordinary role of Zn in enhancing the thermoelectric performance of Ga-doped PbTe. It is discovered that Zn can simultaneously improve the electronic transport properties and decrease the κlat of Ga-doped PbTe, thereby affording a record high ZTavg ~ 1.26 at 400–873 K, with a maximum ZT value of 1.55 at 723 K. The isoelectronic substitution of Zn for Pb in Ga-doped PbTe increases the electrical conductivity and n by inducing the nucleation and growth of Ga2Te3 in the second phase. The formation of Ga2Te3 results in nonstoichiometry and Te deficiency in the PbTe matrix, which increases the number of electron carriers. Additionally, discordant Zn and Ga atoms with displacing off-center from the ideal octahedral positions, as well as Ga2Te3 nanocrystals ranging from 30 to 200 nm coherently embedded into the PbTe matrix effectively weaken the phonon modes and scatter heat-carrying phonons, resulting in a significant reduction in κlat.
Research Organization:
Northwestern Univ., Evanston, IL (United States)
Sponsoring Organization:
Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China; National Natural Science Foundation of China; National Science Foundation (NSF); USDOE; USDOE Office of Science (SC), Basic Energy Sciences (BES)
Grant/Contract Number:
AC02-05CH11231; AC02-06CH11357; SC0014520
OSTI ID:
1867598
Alternate ID(s):
OSTI ID: 1835946
Journal Information:
Energy & Environmental Science, Journal Name: Energy & Environmental Science Journal Issue: 1 Vol. 15; ISSN 1754-5692
Publisher:
Royal Society of ChemistryCopyright Statement
Country of Publication:
United States
Language:
English

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Related Subjects

36 MATERIALS SCIENCE
Discordant Zn atoms
Ga2Te3 nanocrystals
N-type PbTe
Thermal conductivity
Thermoelectric