Persistent Room-Temperature Photodarkening in Cu-Doped β-Ga2O3

Jesenovec, J.; Pansegrau, C.; McCluskey, M. D.; McCloy, J. S.; Gustafson, T. D.; Halliburton, L. E.; Varley, J. B.

doi:10.1103/physrevlett.128.077402

Title: Persistent Room-Temperature Photodarkening in Cu-Doped β - Ga 2 O 3

Journal Article · Wed Feb 16 00:00:00 EST 2022 · Physical Review Letters

DOI:https://doi.org/10.1103/physrevlett.128.077402· OSTI ID:1867090

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Washington State Univ., Pullman, WA (United States)
Wright-Patterson Air Force Base, Dayton, OH (United States)
West Virginia Univ., Morgantown, WV (United States)
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

Beta-Ga2O3 is an ultra-wide bandgap semiconductor with emerging applications in power electronics. The introduction of acceptor dopants yields semi-insulating substrates necessary for thin-film devices. In the present work, exposure of Cu-doped beta-Ga2O3 to UV light > 4 eV is shown to cause large, persistent photo-induced darkening at room temperature. Electron paramagnetic resonance spectroscopy indicates that light exposure converts Cu2+ to Cu3+, a rare oxidation state that is responsible for the optical absorption. The photodarkening is accompanied by the appearance of O-H vibrational modes in the infrared spectrum. Hybrid function calculations show that Cu acceptors can favorably complex with hydrogen donors incorporated as interstitial (Hi) or substitutional (HO) defects. When CuGa-HO complexes absorb light, hydrogen is released, contributing to the observed Cu3+ species and O-H modes.

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Research Organization:: Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Washington State Univ., Pullman, WA (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division; US Air Force Office of Scientific Research (AFOSR); LLNL Laboratory Directed Research and Development

Grant/Contract Number:: AC52-07NA27344; FG02-07ER46386; 22-SI-003; FA9550-18-1-0507

OSTI ID:: 1867090

Alternate ID(s):: OSTI ID: 1958027

Report Number(s):: LLNL-JRNL-834156; 1052559; TRN: US2306568

Journal Information:: Physical Review Letters, Vol. 128, Issue 7; ISSN 0031-9007

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

References (39)

Temperature-dependent capacitance–voltage and current–voltage characteristics of Pt/Ga ₂ O ₃ (001) Schottky barrier diodes fabricated on n ^– –Ga ₂ O ₃ drift layers grown by halide vapor phase epitaxy Higashiwaki, Masataka; Konishi, Keita; Sasaki, Kohei Applied Physics Letters, Vol. 108, Issue 13 https://doi.org/10.1063/1.4945267	journal	March 2016
Photochromism in Transition-Metal-Doped SrTi $O_{3}$ Faughnan, B. W. Physical Review B, Vol. 4, Issue 10 https://doi.org/10.1103/PhysRevB.4.3623	journal	November 1971
Czochralski-grown bulk β-Ga2O3 single crystals doped with mono-, di-, tri-, and tetravalent ions Galazka, Zbigniew; Irmscher, Klaus; Schewski, Robert Journal of Crystal Growth, Vol. 529 https://doi.org/10.1016/j.jcrysgro.2019.125297	journal	January 2020
Impact of proton irradiation on conductivity and deep level defects in β-Ga ₂ O ₃ Ingebrigtsen, M. E.; Kuznetsov, A. Yu.; Svensson, B. G. APL Materials, Vol. 7, Issue 2 https://doi.org/10.1063/1.5054826	journal	February 2019
Recent progress in the growth of β-Ga2O3 for power electronics applications Baldini, Michele; Galazka, Zbigniew; Wagner, Günter Materials Science in Semiconductor Processing, Vol. 78 https://doi.org/10.1016/j.mssp.2017.10.040	journal	May 2018
Structure and vibrational properties of the dominant O-H center in β-Ga ₂ O ₃ Weiser, Philip; Stavola, Michael; Fowler, W. Beall Applied Physics Letters, Vol. 112, Issue 23 https://doi.org/10.1063/1.5029921	journal	June 2018
Ir ⁴⁺ ions in β-Ga ₂ O ₃ crystals: An unintentional deep donor Lenyk, C. A.; Giles, N. C.; Scherrer, E. M. Journal of Applied Physics, Vol. 125, Issue 4 https://doi.org/10.1063/1.5081825	journal	January 2019
Projector augmented-wave method Blöchl, P. E. Physical Review B, Vol. 50, Issue 24, p. 17953-17979 https://doi.org/10.1103/PhysRevB.50.17953	journal	December 1994
Hybrid functionals based on a screened Coulomb potential Heyd, Jochen; Scuseria, Gustavo E.; Ernzerhof, Matthias The Journal of Chemical Physics, Vol. 118, Issue 18 https://doi.org/10.1063/1.1564060	journal	May 2003
Finite-size corrections for defect-involving vertical transitions in supercell calculations Gake, Tomoya; Kumagai, Yu; Freysoldt, Christoph Physical Review B, Vol. 101, Issue 2 https://doi.org/10.1103/PhysRevB.101.020102	journal	January 2020
Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set Kresse, G.; Furthmüller, J. Computational Materials Science, Vol. 6, Issue 1, p. 15-50 https://doi.org/10.1016/0927-0256(96)00008-0	journal	July 1996
Efficient Assembly of Bridged β-Ga2O3 Nanowires for Solar-Blind Photodetection Li, Yanbo; Tokizono, Takero; Liao, Meiyong Advanced Functional Materials, Vol. 20, Issue 22 https://doi.org/10.1002/adfm.201001140	journal	August 2010
Influence of metal choice on (010) β-Ga ₂ O ₃ Schottky diode properties Farzana, Esmat; Zhang, Zeng; Paul, Pran K. Applied Physics Letters, Vol. 110, Issue 20 https://doi.org/10.1063/1.4983610	journal	May 2017
The role of hydrogen and oxygen in the persistent photoconductivity of strontium titanate Poole, Violet M.; Huso, Jesse; McCluskey, Matthew D. Journal of Applied Physics, Vol. 123, Issue 16 https://doi.org/10.1063/1.5009596	journal	April 2018
Self-trapped hole and impurity-related broad luminescence in β -Ga ₂ O ₃ Frodason, Y. K.; Johansen, K. M.; Vines, L. Journal of Applied Physics, Vol. 127, Issue 7 https://doi.org/10.1063/1.5140742	journal	February 2020
Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set Kresse, G.; Furthmüller, J. Physical Review B, Vol. 54, Issue 16, p. 11169-11186 https://doi.org/10.1103/PhysRevB.54.11169	journal	October 1996
Zinc–hydrogen and zinc–iridium pairs in β -Ga ₂ O ₃ Pansegrau, Christopher; Jesenovec, Jani; McCloy, John S. Applied Physics Letters, Vol. 119, Issue 10 https://doi.org/10.1063/5.0062059	journal	September 2021
Editors' Choice—Hydrogen Centers in β-Ga ₂ O ₃ : Infrared Spectroscopy and Density Functional Theory Qin, Ying; Stavola, Michael; Fowler, W. Beall ECS Journal of Solid State Science and Technology, Vol. 8, Issue 7 https://doi.org/10.1149/2.0221907jss	journal	January 2019
Compensation and hydrogen passivation of magnesium acceptors in β-Ga ₂ O ₃ Ritter, Jacob R.; Huso, Jesse; Dickens, Peter T. Applied Physics Letters, Vol. 113, Issue 5 https://doi.org/10.1063/1.5044627	journal	July 2018
Photodarkening and dopant segregation in Cu-doped β-Ga2O3 Czochralski single crystals Jesenovec, Jani; Remple, Cassandra; Huso, Jesse Journal of Crystal Growth, Vol. 578 https://doi.org/10.1016/j.jcrysgro.2021.126419	journal	January 2022
Formation and control of the $E_\mathrm{2}^\mathrm{*}$ center in implanted β -Ga$_\mathrm{2}$O$_\mathrm{3}$ by reverse-bias and zero-bias annealing Zimmermann, C.; Førdestrøm Verhoeven, E.; Kalmann Frodason, Y. Journal of Physics D: Applied Physics, Vol. 53, Issue 46 https://doi.org/10.1088/1361-6463/aba64d	journal	August 2020
First-principles calculations for point defects in solids Freysoldt, Christoph; Grabowski, Blazej; Hickel, Tilmann Reviews of Modern Physics, Vol. 86, Issue 1 https://doi.org/10.1103/RevModPhys.86.253	journal	March 2014
High‐Temperature Photochromism of Fe‐Doped SrTiO ₃ Caused by UV‐Induced Bulk Stoichiometry Changes Viernstein, Alexander; Kubicek, Markus; Morgenbesser, Maximilian Advanced Functional Materials, Vol. 29, Issue 23 https://doi.org/10.1002/adfm.201900196	journal	April 2019
${Cu}^{3 +}$ Ion in Corundum Blumberg, W. E.; Eisinger, J.; Geschwind, S. Physical Review, Vol. 130, Issue 3 https://doi.org/10.1103/PhysRev.130.900	journal	May 1963
Scaling-Up of Bulk β-Ga ₂ O ₃ Single Crystals by the Czochralski Method Galazka, Zbigniew; Uecker, Reinhard; Klimm, Detlef ECS Journal of Solid State Science and Technology, Vol. 6, Issue 2 https://doi.org/10.1149/2.0021702jss	journal	September 2016
Cause of Extremely Long-Lasting Room-Temperature Persistent Photoconductivity in ${SrTiO}_{3}$ and Related Materials Zhang, Zhiqiang; Janotti, Anderson Physical Review Letters, Vol. 125, Issue 12 https://doi.org/10.1103/PhysRevLett.125.126404	journal	September 2020
Electrical properties of bulk semi-insulating β-Ga ₂ O ₃ (Fe) Polyakov, A. Y.; Smirnov, N. B.; Shchemerov, I. V. Applied Physics Letters, Vol. 113, Issue 14 https://doi.org/10.1063/1.5051986	journal	October 2018
Electrical and optical properties of Zr doped β -Ga ₂ O ₃ single crystals Saleh, Muad; Bhattacharyya, Arkka; Varley, Joel B. Applied Physics Express, Vol. 12, Issue 8 https://doi.org/10.7567/1882-0786/ab2b6c	journal	July 2019
Large Persistent Photoconductivity in Strontium Titanate at Room Temperature Poole, Violet M.; Dashdorj, J.; Zvanut, Mary Ellen MRS Proceedings, Vol. 1792 https://doi.org/10.1557/opl.2015.531	journal	January 2015
A climbing image nudged elastic band method for finding saddle points and minimum energy paths Henkelman, Graeme; Uberuaga, Blas P.; Jónsson, Hannes The Journal of Chemical Physics, Vol. 113, Issue 22, p. 9901-9904 https://doi.org/10.1063/1.1329672	journal	December 2000
Schottky Barrier Height Engineering in β -Ga ₂ O ₃ Using SiO ₂ Interlayer Dielectric Bhattacharyya, Arkka; Ranga, Praneeth; Saleh, Muad IEEE Journal of the Electron Devices Society, Vol. 8 https://doi.org/10.1109/JEDS.2020.2974260	journal	January 2020
Degenerate doping in β -Ga ₂ O ₃ single crystals through Hf-doping Saleh, Muad; Varley, Joel B.; Jesenovec, Jani Semiconductor Science and Technology, Vol. 35, Issue 4 https://doi.org/10.1088/1361-6641/ab75a6	journal	March 2020
Zn acceptors in β-Ga ₂ O ₃ crystals Gustafson, T. D.; Jesenovec, J.; Lenyk, C. A. Journal of Applied Physics, Vol. 129, Issue 15 https://doi.org/10.1063/5.0047947	journal	April 2021
?-Gallium Oxide as Oxygen Gas Sensors at a High Temperature Bartic, Marilena; Baban, Cristian-Ioan; Suzuki, Hisao Journal of the American Ceramic Society, Vol. 90, Issue 9 https://doi.org/10.1111/j.1551-2916.2007.01842.x	journal	September 2007
Guest Editorial: The dawn of gallium oxide microelectronics Higashiwaki, Masataka; Jessen, Gregg H. Applied Physics Letters, Vol. 112, Issue 6 https://doi.org/10.1063/1.5017845	journal	February 2018
Electronic and optical properties of Zn-doped β-Ga ₂ O ₃ Czochralski single crystals Jesenovec, Jani; Varley, Joel; Karcher, Samuel E. Journal of Applied Physics, Vol. 129, Issue 22 https://doi.org/10.1063/5.0050468	journal	June 2021
Point defects in Ga ₂ O ₃ McCluskey, Matthew D. Journal of Applied Physics, Vol. 127, Issue 10 https://doi.org/10.1063/1.5142195	journal	March 2020
Persistent Photoconductivity in Strontium Titanate Tarun, Marianne C.; Selim, Farida A.; McCluskey, Matthew D. Physical Review Letters, Vol. 111, Issue 18 https://doi.org/10.1103/PhysRevLett.111.187403	journal	October 2013
Multistability of isolated and hydrogenated Ga–O divacancies in $β - {Ga}_{2} O_{3}$ Frodason, Y. K.; Zimmermann, C.; Verhoeven, E. F. Physical Review Materials, Vol. 5, Issue 2 https://doi.org/10.1103/PhysRevMaterials.5.025402	journal	February 2021

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Title: Persistent Room-Temperature Photodarkening in Cu-Doped β - Ga 2 O 3

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