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Formation Pathway of Wurtzite-like Cu2ZnSnSe4 Nanocrystals

Journal Article · · Inorganic Chemistry
 [1];  [2];  [2]
  1. Univ. of Southern California, Los Angeles, CA (United States); University of Southern California
  2. Univ. of Southern California, Los Angeles, CA (United States)
Cu2ZnSnSe4 is a direct band gap semiconductor composed of Earth-abundant elements, making it an attractive material for thin film photovoltaic technologies. Cu2ZnSnSe4 crystallizes in the kesterite structure type as a bulk material, but it can also crystallize in a metastable wurtzite-like crystal structure when synthesized on the nanoscale. The wurtzite-like polymorph introduces unique and useful properties to Cu2ZnSnSe4 materials, including widely tunable band gaps and superior composi-tional flexibility as compared to kesterite Cu2ZnSnSe4. Here, we investigate the formation pathway of colloidally prepared wurtzite-like Cu2ZnSnSe4 nanocrystals. We show that this quaternary material forms through a chain of reactions, starting with binary Cu3Se2 nanocrystals that, due to both kinetic and thermodynamic reasons, preferentially react with tin to yield hexagonal copper tin selenide intermediates. Furthermore, these ternary intermediates then react with zinc to form the resulting wurtzite-like Cu2ZnSnSe4 nanocrystals. Based on this formation pathway, we suggest synthetic methods that may prevent the for-mation of unwanted impurity phases that are known to hamper the efficiency of Cu2ZnSnSe4-based optoelectronic devices.
Research Organization:
Univ. of Southern California, Los Angeles, CA (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
Grant/Contract Number:
SC0006812
OSTI ID:
1866262
Journal Information:
Inorganic Chemistry, Journal Name: Inorganic Chemistry Journal Issue: 22 Vol. 60; ISSN 0020-1669
Publisher:
American Chemical Society (ACS)Copyright Statement
Country of Publication:
United States
Language:
English

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