Electronic and optical properties of Zn-doped β-Ga2O3 Czochralski single crystals

Jesenovec, Jani; Varley, Joel B.; Karcher, Samuel E.; McCloy, John S.

doi:10.1063/5.0050468

Title: Electronic and optical properties of Zn-doped β-Ga₂O₃ Czochralski single crystals

Journal Article · Thu Jun 10 00:00:00 EDT 2021 · Journal of Applied Physics

DOI:https://doi.org/10.1063/5.0050468· OSTI ID:1866163

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Washington State Univ., Pullman, WA (United States)
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

β-Ga₂O₃ has several soluble deep acceptors that impart insulating behavior. In this study, we investigate Zn doping (0.25at.%) in bulk Czochralski and vertical gradient freeze β-Ga₂O₃. Representative crystals were assessed for orientation (electron backscatter diffraction and Raman spectroscopy), purity (glow discharge mass spectrometry and secondary ion mass spectrometry), optical properties (ultraviolet to near infrared absorption), and electrical properties (resistivity and current–voltage). Purity measurements indicate that Zn evaporation is insufficient to inhibit doping of Zn into β-Ga₂O₃. Hybrid functional calculations show Zn substitutes nearly equally on tetrahedral and octahedral sites, with less than ~0.1eV preference for the octahedral (Ga_II) site. Furthermore, calculations show that Zn_Ga acts as a deep acceptor with trapping levels ~1.3 and ~0.9eV above the valence band for one and two holes, respectively. The solubility and electronic behavior of Zn dopants are consistent with measured concentrations >1×10¹⁸ atoms/cm³ and electrical measurements that show resistivity 10¹¹–10¹³Ωcm, with no p-type conduction.

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Research Organization:: Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA); US Air Force Office of Scientific Research (AFOSR); USDOE Office of Energy Efficiency and Renewable Energy (EERE), Energy Efficiency Office. Advanced Manufacturing Office

Grant/Contract Number:: AC52-07NA27344; FA9550-18-1-0507

OSTI ID:: 1866163

Alternate ID(s):: OSTI ID: 1787686

Report Number(s):: LLNL-JRNL-834058; 1034666; TRN: US2306556

Journal Information:: Journal of Applied Physics, Vol. 129, Issue 22; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Title: Electronic and optical properties of Zn-doped β-Ga2O3 Czochralski single crystals

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Title: Electronic and optical properties of Zn-doped β-Ga₂O₃ Czochralski single crystals