Effect of Surface Ionic Screening on Polarization Reversal and Phase Diagrams in Thin Antiferroelectric Films for Information and Energy Storage

Morozovska, Anna N.; Eliseev, Eugene A.; Biswas, Arpan; Morozovsky, Nicholas V.; Kalinin, Sergei V.

doi:10.1103/physrevapplied.16.044053

Effect of Surface Ionic Screening on Polarization Reversal and Phase Diagrams in Thin Antiferroelectric Films for Information and Energy Storage

Journal Article · Wed Oct 27 00:00:00 EDT 2021 · Physical Review Applied

DOI:https://doi.org/10.1103/physrevapplied.16.044053· OSTI ID:1865691

^[1]; Eliseev, Eugene A. ^[2]; ^[3]; Morozovsky, Nicholas V. ^[2]; Kalinin, Sergei V. ^[3]

National Academy of Sciences of Ukraine (NASU), Kyiv (Ukraine); University of Tennessee, Knoxville
National Academy of Sciences of Ukraine (NASU), Kyiv (Ukraine)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

Emergent behaviors in antiferroelectric thin films due to a coupling between surface electrochemistry and intrinsic polar instabilities are explored within the framework of the modified 2-4-6 Landau-Ginzburg-Devonshire (LGD) thermodynamic approach. By using phenomenological parameters of the LGD potential for a bulk antiferroelectric and a Stephenson-Highland (SH) approach, we study the role of surface ions with a charge density proportional to the relative partial oxygen pressure on the dipole states and their reversal mechanisms in antiferroelectric thin films. The combined LGDSH approach allows the boundaries of antiferroelectric, ferroelectriclike antiferroionic, and electretlike paraelectric states as a function of temperature, oxygen pressure, surface-ion formation energy and concentration, and film thickness to be delineated. This approach also allows the characterization of the polar and antipolar orderings dependence on the voltage applied to the antiferroelectric film, as well as the analysis of their static and dynamic hysteresis loops. Furthermore, the applications of the antiferroelectric films covered with a surface-ion layer for energy and information storage are explored and discussed.

View Accepted Manuscript (DOE)

Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States); Univ. of Washington, Seattle, WA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC05-00OR22725; SC0019288; SC0021118

OSTI ID:: 1865691

Alternate ID(s):: OSTI ID: 1869116

Journal Information:: Physical Review Applied, Journal Name: Physical Review Applied Journal Issue: 4 Vol. 16; ISSN 2331-7019

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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Effect of Surface Ionic Screening on Polarization Reversal and Phase Diagrams in Thin Antiferroelectric Films for Information and Energy Storage

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