Nanoscale studies of electric field effects on monolayer 1T′-WTe2

Maximenko, Yulia; Chang, Yueqing; Chen, Guannan; Hirsbrunner, Mark R.; Swiech, Waclaw; Hughes, Taylor L.; Wagner, Lucas K.; Madhavan, Vidya

doi:10.1038/s41535-022-00433-x

Nanoscale studies of electric field effects on monolayer 1T′-WTe2

Journal Article · Fri Mar 18 00:00:00 EDT 2022 · npj Quantum Materials

DOI:https://doi.org/10.1038/s41535-022-00433-x· OSTI ID:1855890

Maximenko, Yulia; Chang, Yueqing; Chen, Guannan; ; ; Hughes, Taylor L.; Wagner, Lucas K.;

Abstract

Monolayer 1 T′-WTe ₂ is a quantum spin Hall insulator with a gapped 2D-bulk and gapless helical edge states persisting to temperatures ~100 K. Despite the far-ranging interest, the magnitude of the bulk gap, the effect of gating on the 2D-band structure, as well the role interactions are not established. In this work we use STM spectroscopy to measure the intrinsic bulk gap of monolayer 1 T′-WTe ₂ and show that gate induced electric fields cause large changes of the gap magnitude. Our first-principles DFT-derived tight-binding model reveal that a combination of spatial localization of the conduction and valance bands and Rashba-like spin-orbit coupling leads to a gating induced spin-splitting of the 2D-bulk bands in the tens of meV, thereby reducing the band gap. Our work explains the large sensitivity of the band structure to electric fields and suggests a new avenue for realizing proximity induced non-trivial superconductivity in monolayer 1 T′-WTe ₂ .

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Research Organization:: Harvard University, Cambridge, MA (United States); University of Illinois at Urbana-Champaign, IL (United States)

Sponsoring Organization:: Gordon and Betty Moore Foundation; Simons Foundation; USDOE; USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0020128; SC0022101

OSTI ID:: 1855890

Alternate ID(s):: OSTI ID: 1978611

Journal Information:: npj Quantum Materials, Journal Name: npj Quantum Materials Journal Issue: 1 Vol. 7; ISSN 2397-4648

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United Kingdom

Language:: English

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