Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

A chemical model for atomic-precision single-donor incorporation of phosphorus atoms in Si(100)-2x1.

Conference ·
DOI:https://doi.org/10.2172/1854314· OSTI ID:1854314
Abstract not provided.
Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
DOE Contract Number:
NA0003525
OSTI ID:
1854314
Report Number(s):
SAND2021-2467C; 694446
Country of Publication:
United States
Language:
English

Similar Records

Pathways for atomic-precision incorporation of donors and acceptors in silicon.
Conference · Thu Sep 01 00:00:00 EDT 2022 · OSTI ID:2004763

Signatures of missing donors in transport through atomically precise P donor chains in Si.
Conference · Sun Feb 28 23:00:00 EST 2021 · OSTI ID:1854311

A multiscale model of the reaction pathway for p-type doping using diborane on Si(100)-2x1.
Conference · Thu Oct 01 00:00:00 EDT 2020 · OSTI ID:1829238

Related Subjects