Controlled exposure of CuO thin films through corrosion-protecting, ALD-deposited TiO 2 overlayers
[1];
[3]
- Materials Science and Engineering Program , University of Arkansas , Fayetteville , AR 72701 , USA
- Department of Chemistry and Biochemistry , University of Arkansas , Fayetteville , AR 72701 , USA
- Materials Science and Engineering Program , University of Arkansas , Fayetteville , AR 72701 , USA; Department of Chemistry and Biochemistry , University of Arkansas , Fayetteville , AR 72701 , USA
Abstract Ultra-thin film coatings are used to protect semiconductor photoelectrodes from the harsh chemical environments common to photoelectrochemical energy conversion. These layers add contact transfer resistance to the interface that can result in a reduction of photoelectrochemical energy conversion efficiency of the photoelectrode. Here, we describe the concept of apartialprotection layer, which allows for direct chemical access to a small fraction of the semiconductor underlayer for further functionalization by an electrocatalyst. The rest of the interface remains protected by a stable, inert protection layer. CuO is used as a model system for this scheme. Atomic layer deposition (ALD)-prepared TiO2layers on CuO thin films prepared from electrodeposited Cu2O allow for the control of interfacial morphology to intentionally expose the CuO underlayer. The ALD-TiO2overlayer shrinks during crystallization, while Cu2O in the underlayer expands during oxidation. As a result, the TiO2protection layer cracks to expose the oxidized underlying CuO layer, which can be controlled by preceding thermal oxidation. This work demonstrates a potentially promising strategy for the parallel optimization of photoelectrochemical interfaces for chemical stability and high performance.
- Research Organization:
- Univ. of Arkansas, Fayetteville, AR (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC)
- DOE Contract Number:
- SC0020301
- OSTI ID:
- 1853562
- Journal Information:
- Zeitschrift fuer Naturforschung. B: Chemical Sciences, Vol. 76, Issue 10-12; ISSN 0932-0776
- Country of Publication:
- United States
- Language:
- English
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