Metal-insulator transition in transition metal dichalcogenide heterobilayer moiré superlattices

Morales-Durán, Nicolás; MacDonald, Allan H.; Potasz, Pawel

doi:10.1103/physrevb.103.l241110

Title: Metal-insulator transition in transition metal dichalcogenide heterobilayer moiré superlattices

Journal Article · Mon Jun 21 00:00:00 EDT 2021 · Physical Review. B

DOI:https://doi.org/10.1103/physrevb.103.l241110· OSTI ID:1853336

^[1]; MacDonald, Allan H. ^[2];

^[3]

Univ. of Texas at Austin, TX (United States)
Univ. of Texas at Austin, TX (United States)
Univ. of Texas at Austin, TX (United States); Wroclaw Univ. of Science and Technology (Poland)

Moiré superlattices formed in two-dimensional semiconductor heterobilayers provide a new realization of Hubbard model physics in which the number of electrons per effective atom can be tuned at will. Here we report on an exact diagonalization study of the electronic properties of half-filled narrow moiré bands in which correlation strengths are varied by changing twist angles or interaction strengths. We construct a phase diagram for the bilayer, identifying where the metal-insulator phase transition occurs, estimating the sizes of the charge gaps in the insulating phase, and commenting on the nature of the transition and the importance of subdominant interaction parameters.

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Research Organization:: Cornell Univ., Ithaca, NY (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); Polish National Agency for Academic Exchange (NAWA); Texas Advanced Computing Center (TACC)

Grant/Contract Number:: SC0019481

OSTI ID:: 1853336

Journal Information:: Physical Review. B, Vol. 103, Issue 24; ISSN 2469-9950

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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Title: Metal-insulator transition in transition metal dichalcogenide heterobilayer moiré superlattices

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