Moiré and beyond in transition metal dichalcogenide twisted bilayers

Tran, Kha; Choi, Junho; Singh, Akshay

doi:10.1088/2053-1583/abd3e7

Moiré and beyond in transition metal dichalcogenide twisted bilayers

Journal Article · Wed Dec 23 04:00:00 EST 2020 · 2D Materials

DOI:https://doi.org/10.1088/2053-1583/abd3e7· OSTI ID:1853208

Tran, Kha ^[1]; ;

OSTI

Abstract

Fabricating van der Waals bilayer heterostructures (BL-HS) by stacking the same or different two-dimensional layers, offers a unique physical system with rich electronic and optical properties. Twist-angle between component layers has emerged as a remarkable parameter that can control the period of lateral confinement, and nature of the exciton (Coulomb bound electron–hole pair) in reciprocal space thus creating exotic physical states including moiré excitons (MXs). In this review article, we focus on opto-electronic properties of excitons in transition metal dichalcogenide semiconductor twisted BL-HS. We look at existing evidence of MXs in localized and strongly correlated states, and at nanoscale mapping of moiré superlattice and lattice-reconstruction. This review will be helpful in guiding the community as well as motivating work in areas such as near-field optical measurements and controlling the creation of novel physical states.

Research Organization:: Univ. of Texas, Austin, TX (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

DOE Contract Number:: SC0019398

OSTI ID:: 1853208

Journal Information:: 2D Materials, Journal Name: 2D Materials Journal Issue: 2 Vol. 8; ISSN 2053-1583

Publisher:: IOP Publishing

Country of Publication:: United States

Language:: English

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