High-Fidelity Two-Qubit Gates Using a Microelectromechanical-System-Based Beam Steering System for Individual Qubit Addressing

Wang, Ye; Crain, Stephen; Fang, Chao; Zhang, Bichen; Huang, Shilin; Liang, Qiyao; Leung, Pak Hong; Brown, Kenneth R.; Kim, Jungsang

doi:10.1103/physrevlett.125.150505

High-Fidelity Two-Qubit Gates Using a Microelectromechanical-System-Based Beam Steering System for Individual Qubit Addressing

Journal Article · Tue Oct 06 00:00:00 EDT 2020 · Physical Review Letters

DOI:https://doi.org/10.1103/physrevlett.125.150505· OSTI ID:1853028

^[1]; Crain, Stephen ^[2]; Fang, Chao ^[2]; Zhang, Bichen ^[2]; ^[2]; Liang, Qiyao ^[2]; Leung, Pak Hong ^[2]; ^[2]; ^[3]

Duke Univ., Durham, NC (United States); OSTI
Duke Univ., Durham, NC (United States)
Duke Univ., Durham, NC (United States); IonQ, Inc., College Park, MD (United States)

In a large scale trapped atomic ion quantum computer, high-fidelity two-qubit gates need to be extended over all qubits with individual control. We realize and characterize high-fidelity two-qubit gates in a system with up to four ions using radial modes. The ions are individually addressed by two tightly focused beams steered using microelectromechanical system mirrors. We deduce a gate fidelity of 99.49(7)% in a two-ion chain and 99.30(6)% in a four-ion chain by applying a sequence of up to 21 two-qubit gates and measuring the final state fidelity. Our team characterizes the residual errors and discuss methods to further improve the gate fidelity towards values that are compatible with fault-tolerant quantum computation.

View Accepted Manuscript (DOE)

Research Organization:: Duke University, Durham, NC (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

Grant/Contract Number:: SC0019294; SC0019449

OSTI ID:: 1853028

Alternate ID(s):: OSTI ID: 2280971

Journal Information:: Physical Review Letters, Journal Name: Physical Review Letters Journal Issue: 15 Vol. 125; ISSN 0031-9007

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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