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Merged-Element Transmon

Journal Article · · Physical Review Applied
 [1];  [2];  [2];  [2];  [2];  [2];  [3]
  1. Univ. of Colorado, Boulder, CO (United States); National Inst. of Standards and Technology (NIST), Boulder, CO (United States); OSTI
  2. Univ. of Colorado, Boulder, CO (United States); National Inst. of Standards and Technology (NIST), Boulder, CO (United States)
  3. National Inst. of Standards and Technology (NIST), Boulder, CO (United States)
Transmon qubits are ubiquitous in the pursuit of quantum computing using superconducting circuits. However, they have some drawbacks that still need to be addressed. Most importantly, the scalability of transmons is limited by the large device footprint needed to reduce the participation of the lossy capacitive parts of the circuit. In this work, we investigate and evaluate losses in an alternative device geometry, namely, the merged-element transmon (mergemon). To this end, we replace the large external shunt capacitor of a traditional transmon with the intrinsic capacitance of a Josephson junction and achieve an approximately 100 times reduction in qubit dimensions. We report the implementation of the mergemon using a sputtered Nb–amorphous-Si–Nb trilayer film. In an experiment below 10 mK, the frequency of the readout resonator, capacitively coupled to the mergemon, exhibits a qubit-state-dependent shift in the low-power regime. The device also demonstrates the single-photon and multiphoton transitions that represent a weakly anharmonic system in two-tone spectroscopy. The transition spectra are explained well with master-equation simulations. Here, a participation-ratio analysis identifies the dielectric loss of the amorphous-Si tunnel barrier and its interfaces as the dominant source for qubit relaxation. We expect the mergemon to achieve high coherence for relatively small device dimensions when implemented with a low-loss, epitaxially grown, and lattice-matched trilayer.
Research Organization:
Univ. of Colorado, Boulder, CO (United States); Virginia Polytechnic Inst. and State Univ. (Virginia Tech), Blacksburg, VA (United States)
Sponsoring Organization:
Laboratory of Physical Sciences NEQST Program; National Science Foundation (NSF); USDOE Office of Science (SC)
Grant/Contract Number:
SC0019199
OSTI ID:
1852931
Journal Information:
Physical Review Applied, Journal Name: Physical Review Applied Journal Issue: 6 Vol. 14; ISSN 2331-7019; ISSN PRAHB2
Publisher:
American Physical Society (APS)Copyright Statement
Country of Publication:
United States
Language:
English

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