Structure-property relationships and mobility optimization in sputtered La-doped BaSn O3 films: Toward 100cm2 V-1s-1

Postiglione, William M.; Ganguly, Koustav; Yun, Hwanhui; Jeong, Jong Seok; Jacobson, Andrew; Borgeson, Lindsey; Jalan, Bharat; Mkhoyan, K. Andre; Leighton, Chris

doi:10.1103/physrevmaterials.5.044604

Title: Structure-property relationships and mobility optimization in sputtered La-doped BaSn O₃ films: Toward 100cm² V^-1s^-1

Journal Article · Tue Apr 13 00:00:00 EDT 2021 · Physical Review Materials

DOI:https://doi.org/10.1103/physrevmaterials.5.044604· OSTI ID:1852210

^[1]; Ganguly, Koustav ^[1];

^[1]; Jeong, Jong Seok ^[1]; Jacobson, Andrew ^[1]; Borgeson, Lindsey ^[1];

^[1];

^[1]

Univ. of Minnesota, Minneapolis, MN (United States)

he wide band gap semiconducting perovskite BaSnO₃ is of high current interest due to outstanding room temperature mobility at high electron density, fueled by potential applications in oxide, transparent, and power electronics. Due in part to a lack of lattice-matched substrates, BaSnO₃ thin films suffer from high defect densities, however, limiting electron mobility. Additionally, the vast majority of BaSnO₃ thin film research has focused on pulsed laser deposition or molecular beam epitaxy. In this work, we present an exhaustive optimization of the mobility of Ba_0.98La_0.02SnO₃ films grown by a scalable, high-throughput method: high-pressure-oxygen sputter deposition. Considering target synthesis conditions, substrate selection, buffer layer structure, deposition temperature, deposition rate, thickness, and postdeposition annealing conditions, and by combining high-resolution x-ray diffraction, reciprocal space mapping, rocking curve analysis, scanning transmission electron microscopy, atomic force microscopy, and temperature-dependent electronic transport measurements, detailed understanding of synthesis-structure-property relationships is attained. Optimized room temperature mobility of 96 cm²V^–1s^–1 is achieved in vacuum-annealed GdScO₃(110)/BaSnO₃(120 nm)/Ba_0.98La_0.02SnO₃(200 nm) heterostructures, as well as 92 cm²V^–1s^–1 on unbuffered substrates and 87 ²V^–1s^–1 without postdeposition annealing. These results, including important trends in defect densities and a surprising dependence of mobility on lattice mismatch, substantially expand the understanding of the interplay between deposition conditions, microstructure, and transport in doped BaSnO₃ films, establishing competitive mobilities in films fabricated via a scalable, high-throughput, industry-standard technique.

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Research Organization:: Univ. of Minnesota, Minneapolis, MN (United States)

Sponsoring Organization:: USDOE Office of Science (SC); National Science Foundation (NSF)

Grant/Contract Number:: SC0016371; DMR-1420013; DMR-2011401

OSTI ID:: 1852210

Journal Information:: Physical Review Materials, Vol. 5, Issue 4; ISSN 2475-9953

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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Title: Structure-property relationships and mobility optimization in sputtered La-doped BaSn O3 films: Toward 100cm2 V-1s-1

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Title: Structure-property relationships and mobility optimization in sputtered La-doped BaSn O₃ films: Toward 100cm² V^-1s^-1