Realization of semiconducting layered multiferroic heterojunctions via asymmetrical magnetoelectric coupling

Yang, Baishun; Shao, Bin; Wang, Jianfeng; Li, Yang; Yam, ChiYung; Zhang, Shengbai; Huang, Bing

doi:10.1103/physrevb.103.l201405

Realization of semiconducting layered multiferroic heterojunctions via asymmetrical magnetoelectric coupling

Journal Article · Fri May 21 00:00:00 EDT 2021 · Physical Review. B

DOI:https://doi.org/10.1103/physrevb.103.l201405· OSTI ID:1850827

^[1]; Shao, Bin ^[2]; Wang, Jianfeng ^[3]; Li, Yang ^[3]; ^[2]; Zhang, Shengbai ^[4]; Huang, Bing ^[5]

Beijing Computational Science Research Center (China); Shenzhen JL Computational Science and Applied Research Institute (China); OSTI
Beijing Computational Science Research Center (China); Shenzhen JL Computational Science and Applied Research Institute (China)
Beijing Computational Science Research Center (China)
Rensselaer Polytechnic Inst., Troy, NY (United States)
Beijing Computational Science Research Center (China); Beijing Normal University (China)

Two-dimensional (2D) semiconducting multiferroics that can effectively couple magnetic and polarization (P) orders have great interest for both fundamental research and technological applications in nanoscale, which are, however, rare in nature. In this work, we propose a general mechanism to realize semiconducting 2D multiferroics via van der Waals (vdW) heterojunction engineering, as demonstrated in a typical heterostructure consisting of magnetic bilayer CrI₃(bi-CrI₃) and ferroelectric monolayer In₂Se₃. Interestingly, the novel indirect orbital coupling between Se 4p and Cr 3d orbitals, intermediated by the interfacial I 5p orbitals, is switchable in the opposite P configurations, resulting in an unexpected mechanism of strong asymmetrical magnetoelectric coupling. Therefore, along with the noticeable ferroelectric energy barrier induced by In₂Se₃, the realization of opposite magnetic orders in opposite P configurations can eventually result in the novel multiferroicity in bi– CrI₃/In₂Se₃. Finally, we demonstrate that our mechanism can generally be applied to design other vdW multiferroics even with tunable layer thickness.

View Accepted Manuscript (DOE)

Research Organization:: Rensselaer Polytechnic Inst., Troy, NY (United States)

Sponsoring Organization:: China Postdoctoral Science Foundation; Guangdong Shenzhen Joint Key Fund; USDOE Office of Science (SC)

Grant/Contract Number:: SC0002623

OSTI ID:: 1850827

Journal Information:: Physical Review. B, Journal Name: Physical Review. B Journal Issue: 20 Vol. 103; ISSN 2469-9950

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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Realization of semiconducting layered multiferroic heterojunctions via asymmetrical magnetoelectric coupling

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