Double band inversion in the topological phase transition of Ge 1-x Sn x alloys
Abstract We use first-principles simulation and alchemical mixing approximation to reveal the unique double band inversion and topological phase transition in GeSnalloys. Wave function parity, spatial charge distribution and surface state spectrum analyses suggest that the band inversion in GeSnis relayed by its first valence band. As the system evolves from Ge to-Sn, its conduction band moves down, and inverts with the first and the second valence bands consecutively. The first band inversion makes the system nontrivial, while the second one does not change the topological invariant of the system. Both of the band inversions yield surface modes spanning the individual inverted gaps, but only the surface mode in the upper gap associates with the nontrivial nature of tensile-strained-Sn.
- Research Organization:
- Univ. of Illinois at Urbana-Champaign, IL (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC)
- DOE Contract Number:
- FG02-07ER46383
- OSTI ID:
- 1849757
- Journal Information:
- Europhysics Letters, Vol. 133, Issue 5; ISSN 0295-5075
- Publisher:
- IOP Publishing
- Country of Publication:
- United States
- Language:
- English
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