Experimental determination of the valence band offsets of ZnGeN2 and (ZnGe)0.94Ga0.12N2 with GaN

Karim, Md Rezaul; Noesges, Brenton A.; Jayatunga, Benthara Hewage Dinushi; Zhu, Menglin; Hwang, Jinwoo; Lambrecht, Walter R. L.; Brillson, Leonard J.; Kash, Kathleen; Zhao, Hongping

doi:10.1088/1361-6463/abee45

Title: Experimental determination of the valence band offsets of ZnGeN₂ and (ZnGe)_0.94Ga_0.12N₂ with GaN

Journal Article · Thu Mar 25 00:00:00 EDT 2021 · Journal of Physics. D, Applied Physics

DOI:https://doi.org/10.1088/1361-6463/abee45· OSTI ID:1848865

; Noesges, Brenton A.; Jayatunga, Benthara Hewage Dinushi; Zhu, Menglin; Hwang, Jinwoo;

; Brillson, Leonard J.; Kash, Kathleen;

A predicted type-II staggered band alignment with an approximately 1.4 eV valence band offset at the ZnGeN₂/GaN heterointerface has inspired novel band-engineered III-N/ZnGeN₂heterostructure-based device designs for applications in high performance optoelectronics. We report on the determination of the valence band offset between metalorganic chemical vapor deposition grown (ZnGe)_1-xGa_2xN₂, for x= 0 and 0.06, and GaN using x-ray photoemission spectroscopy. The valence band of ZnGeN₂was found to lie 1.45–1.65 eV above that of GaN. This result agrees well with the value predicted by first-principles density functional theory calculations using the local density approximation for the potential profile and quasiparticle self-consistent GW calculations of the band edge states relative to the potential. For (ZnGe)_0.94Ga_0.12N₂the value was determined to be 1.29 eV, ~10%–20% lower than that of ZnGeN₂. The experimental determination of the large band offset between ZnGeN₂ and GaN provides promising alternative solutions to address challenges faced with pure III-nitride-based structures and devices.

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Research Organization:: The Ohio State Univ., Columbus, OH (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE)

DOE Contract Number:: EE0008718

OSTI ID:: 1848865

Journal Information:: Journal of Physics. D, Applied Physics, Vol. 54, Issue 24; ISSN 0022-3727

Publisher:: IOP Publishing

Country of Publication:: United States

Language:: English

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