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Matrix Inductor With DC-Bias Effect Reduction Capability for GaN-Based DC-DC Boost Converter

Journal Article · · IEEE Transactions on Circuits and Systems. II, Express Briefs
 [1];  [2];  [2];  [3]
  1. Virginia Polytechnic Institute and State University (Virginia Tech), Blacksburg, VA (United States); Virginia Tech
  2. Virginia Polytechnic Institute and State University (Virginia Tech), Blacksburg, VA (United States)
  3. National Ilan University, Yilan (Taiwan)

In this report, a 400-W Gallium Nitride device based DC-DC boost converter with a four phase matrix inductor is proposed. It is well-known that there is a significant influence of the DC bias on inductor core losses and the simplest solution is to employ multiphase structures. However, the size of the converter will also increase as the number of phases increases. Therefore, in order to achieve both high efficiency and high power density, a matrix inductor is proposed for four phases boost converter. The proposed matrix inductor retains the flux sharing advantages of conventional inductors with E-cores and thus greatly increases the power density and utilization rate, by integrating the inductors through flux cancellation. Therefore, both the size and the core loss are reduced when compared with four conventional inductors. Moreover, since the four phases are operated in parallel, the phase error, which is a critical problem in the interleaved structure, may not affect the proposed converter, removing the current balance issue. Critical operation mode is utilized to achieve zero-voltage switching (ZVS) for all switches. Finally, the proposed four phase DC-DC boost converter and matrix inductor is built and tested to verify its feasibility. The peak and CEC efficiency is tested to be 99.3% and 99.1%, respectively.

Research Organization:
Virginia Polytechnic Institute and State University (Virginia Tech), Blacksburg, VA (United States)
Sponsoring Organization:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
Grant/Contract Number:
EE0008347
OSTI ID:
1848747
Alternate ID(s):
OSTI ID: 2006456
Journal Information:
IEEE Transactions on Circuits and Systems. II, Express Briefs, Journal Name: IEEE Transactions on Circuits and Systems. II, Express Briefs Journal Issue: 11 Vol. 67; ISSN 1549-7747
Publisher:
IEEECopyright Statement
Country of Publication:
United States
Language:
English

References (18)

Design of GaN-Based MHz Totem-Pole PFC Rectifier journal September 2016
Circuit Design Considerations for Reducing Parasitic Effects on GaN-Based 1-MHz High-Power-Density High-Step-Up/Down Isolated Resonant Converters journal June 2019
A 10-MHz GaN HEMT DC/DC Boost Converter for Power Amplifier Applications journal November 2012
High-Efficiency PFM Boost Converter With an Accurate Zero Current Detector journal November 2018
A Boost Type Resonant Forward Converter With Topology Combination journal December 2018
Averaged Small-Signal Model of PWM DC-DC Converters in CCM Including Switching Power Loss journal February 2019
High-Efficiency High-Power-Density LLC Converter With an Integrated Planar Matrix Transformer for High-Output Current Applications journal November 2017
A 98.3% Efficient GaN Isolated Bidirectional DC–DC Converter for DC Microgrid Energy Storage System Applications journal November 2017
High-Efficiency High-Density Critical Mode Rectifier/Inverter for WBG-Device-Based On-Board Charger journal November 2017
Analysis and Implementation of a High Voltage Gain 1 MHz Bidirectional DC–DC Converter journal February 2020
Open-Loop Control Methods for Interleaved DCM/CCM Boundary Boost PFC Converters journal July 2008
Interleaved Critical Current Mode Boost PFC Converter With Coupled Inductor journal September 2011
Core Losses Under the DC Bias Condition Based on Steinmetz Parameters journal February 2012
A Survey of Wide Bandgap Power Semiconductor Devices journal May 2014
High-Frequency PWM Buck Converters Using GaN-on-SiC HEMTs journal May 2014
High-Frequency High-Efficiency GaN-Based Interleaved CRM Bidirectional Buck/Boost Converter with Inverse Coupled Inductor journal June 2016
ZVS of Power MOSFETs Revisited journal January 2016
Optimal Design of Planar Magnetic Components for a Two-Stage GaN-Based DC–DC Converter journal April 2019