Isoelectronic perturbations to f - d -electron hybridization and the enhancement of hidden order in URu 2 Si 2

Wolowiec, Christian T.; Kanchanavatee, Noravee; Huang, Kevin; Ran, Sheng; Breindel, Alexander J.; Pouse, Naveen; Sasmal, Kalyan; Baumbach, Ryan E.; Chappell, Greta; Riseborough, Peter S.; Maple, M. Brian

doi:10.1073/pnas.2026591118

Isoelectronic perturbations to f - d -electron hybridization and the enhancement of hidden order in URu ₂ Si ₂

Journal Article · Tue May 11 00:00:00 EDT 2021 · Proceedings of the National Academy of Sciences of the United States of America

DOI:https://doi.org/10.1073/pnas.2026591118· OSTI ID:1847993

^[1]; ^[1]; Huang, Kevin ^[1]; Ran, Sheng ^[1]; Breindel, Alexander J. ^[1]; Pouse, Naveen ^[1]; Sasmal, Kalyan ^[1]; Baumbach, Ryan E. ^[2]; Chappell, Greta ^[2]; Riseborough, Peter S. ^[3]; Maple, M. Brian ^[1]

Department of Physics, University of California San Diego, La Jolla, CA 92093,, Center for Advanced Nanoscience, University of California San Diego, La Jolla, CA 92093,
National High Magnetic Field Laboratory, Florida State University, Tallahassee, FL 32310,, Department of Physics, Florida State University, Tallahassee, FL 32306,
Physics Department, Temple University, Philadelphia, PA 19122

Significance

Phase transitions often manifest themselves in characteristic signatures in the electrical resistivity. Here, we track the temperature increase of the resistive signature of the hidden-order (HO) phase transition in URu ₂ Si ₂ , a mysterious phase with unknown order parameter. The application of pressure and the isoelectronic substitutions of Fe and Os ions for Ru are the only known perturbations to favor the HO phase. These perturbations are likely to cause increases in $f$ - $d$ -electron hybridization that lead to degeneracy and instabilities in the electronic band structure. The degeneracy is lifted by partial gapping of electronic states over the Fermi surface during the transition to HO. This and related investigations point to the importance of isoelectronic perturbations in generating emergent electronic phases.

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Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: FG02-04ER46105; NA0002909

OSTI ID:: 1847993

Journal Information:: Proceedings of the National Academy of Sciences of the United States of America, Journal Name: Proceedings of the National Academy of Sciences of the United States of America Journal Issue: 20 Vol. 118; ISSN 0027-8424

Publisher:: Proceedings of the National Academy of SciencesCopyright Statement

Country of Publication:: United States

Language:: English

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Isoelectronic perturbations to f - d -electron hybridization and the enhancement of hidden order in URu 2 Si 2

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Isoelectronic perturbations to f - d -electron hybridization and the enhancement of hidden order in URu ₂ Si ₂