Oxide Two‐Dimensional Electron Gas with High Mobility at Room‐Temperature

Eom, Kitae; Paik, Hanjong; Seo, Jinsol; Campbell, Neil; Tsymbal, Evgeny Y.; Oh, Sang Ho; Rzchowski, Mark S.; Schlom, Darrell G.; Eom, Chang‐Beom

doi:10.1002/advs.202105652

Oxide Two‐Dimensional Electron Gas with High Mobility at Room‐Temperature

Journal Article · Sun Feb 20 00:00:00 EST 2022 · Advanced Science

DOI:https://doi.org/10.1002/advs.202105652· OSTI ID:1845934

^[1]; ^[2]; Seo, Jinsol ^[3]; Campbell, Neil ^[4]; Tsymbal, Evgeny Y. ^[5]; Oh, Sang Ho ^[3]; Rzchowski, Mark S. ^[4]; Schlom, Darrell G. ^[6]; ^[1]

Department of Materials Science and Engineering University of Wisconsin‐Madison Madison WI 53706 USA
Department of Material Science and Engineering Cornell University Ithaca NY 14853 USA, Platform for the Accelerated Realization, Analysis, and Discovery of Interface Materials (PARADIM) Cornell University Ithaca NY 14853 USA
Department of Energy Science Sungkyunkwan University (SKKU) Suwon 16419 Republic of Korea
Department of Physics University of Wisconsin Madison WI 53706 USA
Department of Physics and Astronomy University of Nebraska Lincoln NE 68588 USA
Department of Material Science and Engineering Cornell University Ithaca NY 14853 USA, Kavli Institute at Cornell for Nanoscale Science Ithaca NY 14850 USA, Leibniz‐Institut für Kristallzüchtung Berlin 12489 Germany

Abstract

The prospect of 2‐dimensional electron gases (2DEGs) possessing high mobility at room temperature in wide‐bandgap perovskite stannates is enticing for oxide electronics, particularly to realize transparent and high‐electron mobility transistors. Nonetheless only a small number of studies to date report 2DEGs in BaSnO ₃ ‐based heterostructures. Here, 2DEG formation at the LaScO ₃ /BaSnO ₃ (LSO/BSO) interface with a room‐temperature mobility of 60 cm ² V ⁻¹ s ⁻¹ at a carrier concentration of 1.7 × 10 ¹³ cm ^–2 is reported. This is an order of magnitude higher mobility at room temperature than achieved in SrTiO ₃ ‐based 2DEGs. This is achieved by combining a thick BSO buffer layer with an ex situ high‐temperature treatment, which not only reduces the dislocation density but also produces a SnO ₂ ‐terminated atomically flat surface, followed by the growth of an overlying BSO/LSO interface. Using weak beam dark‐field transmission electron microscopy imaging and in‐line electron holography technique, a reduction of the threading dislocation density is revealed, and direct evidence for the spatial confinement of a 2DEG at the BSO/LSO interface is provided. This work opens a new pathway to explore the exciting physics of stannate‐based 2DEGs at application‐relevant temperatures for oxide nanoelectronics.

View Journal Article

Research Organization:: University of Wisconsin, Madison, WI (United States)

Sponsoring Organization:: Air Force Office of Scientific Research (AFOSR); Gordon and Betty Moore Foundation; National Science Foundation (NSF); Office of Naval Research (ONR); Samsung Research Funding and Incubation Center; USDOE; USDOE Office of Science (SC), Basic Energy Sciences (BES); Vannevar Bush Faculty Fellowship

Grant/Contract Number:: FG02-06ER46327

OSTI ID:: 1845934

Alternate ID(s):: OSTI ID: 1845935
OSTI ID: 1904644

Journal Information:: Advanced Science, Journal Name: Advanced Science Journal Issue: 12 Vol. 9; ISSN 2198-3844

Publisher:: Wiley Blackwell (John Wiley & Sons)Copyright Statement

Country of Publication:: Germany

Language:: English

References (48)

Electronic and Structural Transitions of LaAlO ₃ /SrTiO ₃ Heterostructure Driven by Polar Field‐Assisted Oxygen Vacancy Formation at the Surface Song, Kyung; Min, Taewon; Seo, Jinsol Advanced Science, Vol. 8, Issue 14 https://doi.org/10.1002/advs.202002073	journal	May 2021
Melt Growth and Physical Properties of Bulk LaInO ₃ Single Crystals Galazka, Zbigniew; Irmscher, Klaus; Ganschow, Steffen physica status solidi (a), Vol. 218, Issue 16 https://doi.org/10.1002/pssa.202100016	journal	July 2021
Dielectric properties of SrTiO3 single crystals subjected to high electric fields and later irradiated with X-rays orγ-rays Choudhury, B. K.; Rao, K. V.; Choudhury, R. N. P. Journal of Materials Science, Vol. 24, Issue 10 https://doi.org/10.1007/BF02385726	journal	October 1989
The electric charge and climb of edge dislocations in perovskite oxides: The case of high-pressure MgSiO3 bridgmanite Hirel, P.; Carrez, P.; Clouet, E. Acta Materialia, Vol. 106 https://doi.org/10.1016/j.actamat.2016.01.019	journal	March 2016
Single crystal growth and characterization of Ba2ScNbO6 – A novel substrate for BaSnO3 films Guguschev, C.; Klimm, D.; Brützam, M. Journal of Crystal Growth, Vol. 528 https://doi.org/10.1016/j.jcrysgro.2019.125263	journal	December 2019
Towards full-resolution inline electron holography Koch, Christoph T. Micron, Vol. 63 https://doi.org/10.1016/j.micron.2013.10.009	journal	August 2014
On specimen tilt for electron holography of semiconductor devices Formanek, Petr; Bugiel, Eberhard Ultramicroscopy, Vol. 106, Issue 4-5 https://doi.org/10.1016/j.ultramic.2005.09.003	journal	March 2006
Dopant Segregation Inside and Outside Dislocation Cores in Perovskite BaSnO ₃ and Reconstruction of the Local Atomic and Electronic Structures Yun, Hwanhui; Prakash, Abhinav; Birol, Turan Nano Letters, Vol. 21, Issue 10 https://doi.org/10.1021/acs.nanolett.1c00966	journal	May 2021
Separating Electrons and Donors in BaSnO ₃ via Band Engineering Prakash, Abhinav; Quackenbush, Nicholas F.; Yun, Hwanhui Nano Letters, Vol. 19, Issue 12 https://doi.org/10.1021/acs.nanolett.9b03825	journal	November 2019
Dislocations in SrTiO ₃ : Easy To Reduce but Not so Fast for Oxygen Transport Marrocchelli, Dario; Sun, Lixin; Yildiz, Bilge Journal of the American Chemical Society, Vol. 137, Issue 14 https://doi.org/10.1021/ja513176u	journal	April 2015
Electromechanical Coupling among Edge Dislocations, Domain Walls, and Nanodomains in BiFeO ₃ Revealed by Unit-Cell-Wise Strain and Polarization Maps Lubk, A.; Rossell, M. D.; Seidel, J. Nano Letters, Vol. 13, Issue 4 https://doi.org/10.1021/nl304229k	journal	March 2013
A high-mobility electron gas at the LaAlO3/SrTiO3 heterointerface Ohtomo, A.; Hwang, H. Y. Nature, Vol. 427, Issue 6973 https://doi.org/10.1038/nature02308	journal	January 2004
Creation of a two-dimensional electron gas at an oxide interface on silicon Park, J. W.; Bogorin, D. F.; Cen, C. Nature Communications, Vol. 1, Issue 1 https://doi.org/10.1038/ncomms1096	journal	October 2010
Wide bandgap BaSnO3 films with room temperature conductivity exceeding 104 S cm−1 Prakash, Abhinav; Xu, Peng; Faghaninia, Alireza Nature Communications, Vol. 8, Issue 1 https://doi.org/10.1038/ncomms15167	journal	May 2017
A high-mobility two-dimensional electron gas at the spinel/perovskite interface of γ-Al2O3/SrTiO3 Chen, Y. Z.; Bovet, N.; Trier, F. Nature Communications, Vol. 4, Issue 1 https://doi.org/10.1038/ncomms2394	journal	January 2013
Suppression of the critical thickness threshold for conductivity at the LaAlO3/SrTiO3 interface Lesne, E.; Reyren, N.; Doennig, D. Nature Communications, Vol. 5, Issue 1 https://doi.org/10.1038/ncomms5291	journal	July 2014
Magnetic effects at the interface between non-magnetic oxides Brinkman, A.; Huijben, M.; van Zalk, M. Nature Materials, Vol. 6, Issue 7, p. 493-496 https://doi.org/10.1038/nmat1931	journal	June 2007
Extreme mobility enhancement of two-dimensional electron gases at oxide interfaces by charge-transfer-induced modulation doping Chen, Y. Z.; Trier, F.; Wijnands, T. Nature Materials, Vol. 14, Issue 8 https://doi.org/10.1038/nmat4303	journal	June 2015
Direct imaging of the coexistence of ferromagnetism and superconductivity at the LaAlO₃/SrTiO₃ interface Bert, Julie A.; Kalisky, Beena; Bell, Christopher Nature Physics, Vol. 7, Issue 10, p. 767-771 https://doi.org/10.1038/nphys2079	journal	September 2011
Ferromagnetic exchange, spin–orbit coupling and spiral magnetism at the LaAlO3/SrTiO3 interface Banerjee, Sumilan; Erten, Onur; Randeria, Mohit Nature Physics, Vol. 9, Issue 10 https://doi.org/10.1038/nphys2702	journal	August 2013
Oxygen vacancy-assisted recovery process for increasing electron mobility in n-type BaSnO3 epitaxial thin films Yoon, Daseob; Yu, Sangbae; Son, Junwoo NPG Asia Materials, Vol. 10, Issue 4 https://doi.org/10.1038/s41427-018-0038-1	journal	April 2018
Direct observation of a two-dimensional hole gas at oxide interfaces Lee, H.; Campbell, N.; Lee, J. Nature Materials, Vol. 17, Issue 3 https://doi.org/10.1038/s41563-017-0002-4	journal	February 2018
Direct imaging of the electron liquid at oxide interfaces Song, Kyung; Ryu, Sangwoo; Lee, Hyungwoo Nature Nanotechnology, Vol. 13, Issue 3 https://doi.org/10.1038/s41565-017-0040-8	journal	February 2018
Interface polarization model for a 2-dimensional electron gas at the BaSnO3/LaInO3 interface Kim, Young Mo; Markurt, T.; Kim, Youjung Scientific Reports, Vol. 9, Issue 1 https://doi.org/10.1038/s41598-019-52772-8	journal	November 2019
The role of dislocation scattering in n -type GaN films Ng, H. M.; Doppalapudi, D.; Moustakas, T. D. Applied Physics Letters, Vol. 73, Issue 6 https://doi.org/10.1063/1.122012	journal	August 1998
Improvement of electron mobility in La:BaSnO ₃ thin films by insertion of an atomically flat insulating (Sr,Ba)SnO ₃ buffer layer Shiogai, Junichi; Nishihara, Kazuki; Sato, Kazuhisa AIP Advances, Vol. 6, Issue 6 https://doi.org/10.1063/1.4953808	journal	June 2016
Conducting interface states at LaInO ₃ /BaSnO ₃ polar interface controlled by Fermi level Kim, Useong; Park, Chulkwon; Kim, Young Mo APL Materials, Vol. 4, Issue 7 https://doi.org/10.1063/1.4959960	journal	July 2016
Single crystal growth and optical properties of a transparent perovskite oxide LaInO ₃ Jang, Dong Hyun; Lee, Woong-Jhae; Sohn, Egon Journal of Applied Physics, Vol. 121, Issue 12 https://doi.org/10.1063/1.4977863	journal	March 2017
Realization of an atomically flat BaSnO ₃ (001) substrate with SnO ₂ termination Lee, Woong-Jhae; Lee, Hwangho; Ko, Kyung-Tae Applied Physics Letters, Vol. 111, Issue 23 https://doi.org/10.1063/1.4997238	journal	December 2017
Adsorption-controlled growth of La-doped BaSnO ₃ by molecular-beam epitaxy Paik, Hanjong; Chen, Zhen; Lochocki, Edward APL Materials, Vol. 5, Issue 11 https://doi.org/10.1063/1.5001839	journal	November 2017
High-temperature-grown buffer layer boosts electron mobility in epitaxial La-doped BaSnO ₃ /SrZrO ₃ heterostructures Nono Tchiomo, Arnaud P.; Braun, Wolfgang; Doyle, Bryan P. APL Materials, Vol. 7, Issue 4 https://doi.org/10.1063/1.5094867	journal	April 2019
Oxide interfaces for novel electronic applications Bjaalie, L.; Himmetoglu, B.; Weston, L. New Journal of Physics, Vol. 16, Issue 2 https://doi.org/10.1088/1367-2630/16/2/025005	journal	February 2014
Remote Doping of the Two-Dimensional-Electron-Gas State at the La In O 3 / Ba Sn O 3 Polar Interface Shin, Juyeon; Kim, Young Mo; Park, Chulkwon Physical Review Applied, Vol. 13, Issue 6 https://doi.org/10.1103/PhysRevApplied.13.064066	journal	June 2020
Effect of charged dislocation scattering on electrical and electrothermal transport in n -type InN Miller, Nate; Haller, Eugene E.; Koblmüller, Gregor Physical Review B, Vol. 84, Issue 7 https://doi.org/10.1103/PhysRevB.84.075315	journal	August 2011
Metal-insulator transitions in epitaxial LaVO 3 and LaTiO 3 films He, C.; Sanders, T. D.; Gray, M. T. Physical Review B, Vol. 86, Issue 8 https://doi.org/10.1103/PhysRevB.86.081401	journal	August 2012
Electronic correlation and strain effects at the interfaces between polar and nonpolar complex oxides Annadi, A.; Putra, A.; Liu, Z. Q. Physical Review B, Vol. 86, Issue 8 https://doi.org/10.1103/PhysRevB.86.085450	journal	August 2012
Physical properties of transparent perovskite oxides (Ba,La)SnO 3 with high electrical mobility at room temperature Kim, Hyung Joon; Kim, Useong; Kim, Tai Hoon Physical Review B, Vol. 86, Issue 16 https://doi.org/10.1103/PhysRevB.86.165205	journal	October 2012
Indications of strong neutral impurity scattering in Ba(Sn,Sb)O 3 single crystals Kim, Hyung Joon; Kim, Jiyeon; Kim, Tai Hoon Physical Review B, Vol. 88, Issue 12 https://doi.org/10.1103/PhysRevB.88.125204	journal	September 2013
First-principles study of the mobility of SrTiO 3 Himmetoglu, Burak; Janotti, Anderson; Peelaers, Hartwin Physical Review B, Vol. 90, Issue 24 https://doi.org/10.1103/PhysRevB.90.241204	journal	December 2014
Prediction of a mobile two-dimensional electron gas at the LaSc O 3 / BaSn O 3 (001) interface Paudel, Tula R.; Tsymbal, Evgeny Y. Physical Review B, Vol. 96, Issue 24 https://doi.org/10.1103/PhysRevB.96.245423	journal	December 2017
Tunable Rashba Spin-Orbit Interaction at Oxide Interfaces Caviglia, A. D.; Gabay, M.; Gariglio, S. Physical Review Letters, Vol. 104, Issue 12, Article No. 126803 https://doi.org/10.1103/PhysRevLett.104.126803	journal	March 2010
Quantization of Hall Resistance at the Metallic Interface between an Oxide Insulator and SrTiO 3 Trier, Felix; Prawiroatmodjo, Guenevere E. D. K.; Zhong, Zhicheng Physical Review Letters, Vol. 117, Issue 9 https://doi.org/10.1103/PhysRevLett.117.096804	journal	August 2016
Superconducting Interfaces Between Insulating Oxides Reyren, N.; Thiel, S.; Caviglia, A. D. Science, Vol. 317, Issue 5842 https://doi.org/10.1126/science.1146006	journal	August 2007
Pascal conductance series in ballistic one-dimensional LaAlO ₃ /SrTiO ₃ channels Briggeman, Megan; Tomczyk, Michelle; Tian, Binbin Science, Vol. 367, Issue 6479 https://doi.org/10.1126/science.aat6467	journal	February 2020
High Mobility in a Stable Transparent Perovskite Oxide Kim, Hyung Joon; Kim, Useong; Kim, Hoon Min Applied Physics Express, Vol. 5, Issue 6 https://doi.org/10.1143/APEX.5.061102	journal	May 2012
Electronic Structure, Electrical and Dielectric Properties of BaSnO ₃ below 300 K Singh, Prabhakar; Brandenburg, Benjamin J.; Sebastian, C. Peter Japanese Journal of Applied Physics, Vol. 47, Issue 5 https://doi.org/10.1143/JJAP.47.3540	journal	May 2008
Transparent Perovskite Barium Stannate with High Electron Mobility and Thermal Stability Lee, Woong-Jhae; Kim, Hyung Joon; Kang, Jeonghun Annual Review of Materials Research, Vol. 47, Issue 1 https://doi.org/10.1146/annurev-matsci-070616-124109	journal	July 2017
2DEGs at Perovskite Interfaces between KTaO3 or KNbO3 and Stannates Fan, Xiaofeng; Zheng, Weitao; Chen, Xin PLoS ONE, Vol. 9, Issue 3 https://doi.org/10.1371/journal.pone.0091423	journal	March 2014

Similar Records

High-mobility BaSnO{sub 3} grown by oxide molecular beam epitaxy

Journal Article · Thu Dec 31 23:00:00 EST 2015 · APL Materials · OSTI ID:22499246

Related Subjects

2-dimensional electron gas
36 MATERIALS SCIENCE
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
alkaline-earth stannate
room temperature high mobility
transparent conducting oxide

Oxide Two‐Dimensional Electron Gas with High Mobility at Room‐Temperature

Citation Formats

References (48)

Similar Records

Related Subjects