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CIGS photovoltaics: reviewing an evolving paradigm

Journal Article · · Journal of Physics. D, Applied Physics
 [1];  [2];  [3];  [4]
  1. HelioSourceTech, Tucson, AZ (United States)
  2. Helmholtz Center for Materials and Energy, Berlin (Germany)
  3. Tokyo Institute of Technology (Japan)
  4. National Renewable Energy Lab. (NREL), Golden, CO (United States)
+ Show Author Affiliations
Copper indium selenide chalcopyrite-structure alloys with gallium (CIGS) are unique among the highest performing photovoltaic (PV) semiconductor technologies. They are structurally disordered, nonstoichiometric materials that have been engineered to achieve remarkably low bulk nonradiative recombination levels. Nevertheless, their performance can be further improved. This review adopts a fundamental thermodynamic perspective to comparatively assess the root causes of present limitations on CIGS PV performance. The topics of selectivity and passivation of contacts to CIGS and its multinary alloys are covered, highlighting pathways to maximizing the electrochemical potential between those contacts under illumination. Further, an overview of absorber growth methods and resulting properties is also provided. We recommend that CIGS researchers consider strategies that have been successfully implemented in the more mature wafer-based GaAs and Si PV device technologies, based on the paradigm of an idealized PV device design using an isotropic absorber with minimal nonradiative recombination, maximal light trapping, and both electron-selective and hole-selective passivated contacts. We foresee that CIGS technology will reach the 25% efficiency level within the next few years through enhanced collection and reduced recombination. To significantly impact power-generation applications, cost-effective, manufacturable solutions are also essential.
Research Organization:
National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Sponsoring Organization:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
Grant/Contract Number:
AC36-08GO28308
OSTI ID:
1843349
Report Number(s):
NREL/JA-5K00-78937; MainId:32854; UUID:b5b894ef-4e4c-47bf-a22b-f86b94d20a89; MainAdminID:63417
Journal Information:
Journal of Physics. D, Applied Physics, Journal Name: Journal of Physics. D, Applied Physics Journal Issue: 17 Vol. 55; ISSN 0022-3727
Publisher:
IOP PublishingCopyright Statement
Country of Publication:
United States
Language:
English

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Related Subjects

14 SOLAR ENERGY
Cu(InGa)Se2
passivation
photovoltaics
recombination
selective contacts
solar cells