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Analysis of the dependence of critical electric field on semiconductor bandgap

Journal Article · · Journal of Materials Research

Abstract

Understanding of semiconductor breakdown under high electric fields is an important aspect of materials’ properties, particularly for the design of power devices. For decades, a power-law has been used to describe the dependence of material-specific critical electrical field ( $$$${\mathcal{E}}_{\text{crit}}$$$$ E crit ) at which the material breaks down and bandgap ( E g ) . The relationship is often used to gauge tradeoffs of emerging materials whose properties haven’t yet been determined. Unfortunately, the reported dependencies of $$$${\mathcal{E}}_{\text{crit}}$$$$ E crit on E g cover a surprisingly wide range in the literature. Moreover, $$$${\mathcal{E}}_{\text{crit}}$$$$ E crit is a function of material doping. Further, discrepancies arise in $$$${\mathcal{E}}_{\text{crit}}$$$$ E crit values owing to differences between punch-through and non-punch-through device structures. We report a new normalization procedure that enables comparison of critical electric field values across materials, doping, and different device types. An extensive examination of numerous references reveals that the dependence $$$${\mathcal{E}}_{\text{crit}}$$$$ E crit ∝ E g 1.83 best fits the most reliable and newest data for both direct and indirect semiconductors.

Graphical abstract

Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC), Basic Energy Sciences (BES)
Grant/Contract Number:
NA0003525; SC0021230
OSTI ID:
1843053
Alternate ID(s):
OSTI ID: 1882882
Journal Information:
Journal of Materials Research, Journal Name: Journal of Materials Research Journal Issue: 4 Vol. 37; ISSN 0884-2914
Publisher:
Cambridge University Press (CUP)Copyright Statement
Country of Publication:
United States
Language:
English

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