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Physics of Semiconductor Devices
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book
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January 2007 |
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Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges
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journal
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December 2017 |
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Electrical characterization of diamond PiN diodes for high voltage applications: Electrical characterization of diamond PiN diodes
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journal
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July 2013 |
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Analysis and Simulation of Semiconductor Devices
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book
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January 1984 |
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A 2015 perspective on the nature of the steady-state and transient electron transport within the wurtzite phases of gallium nitride, aluminum nitride, indium nitride, and zinc oxide: a critical and retrospective review
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journal
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May 2015 |
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Calculation of avalanche breakdown voltages of silicon p-n junctions
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journal
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January 1967 |
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Impact ionization in silicon: A review and update
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journal
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June 1990 |
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Device properties of homoepitaxially grown diamond
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journal
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April 1993 |
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Problems related to the avalanche and secondary breakdown of silicon P-N junction
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journal
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May 1997 |
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Critical electric fields of AlGaN in AlGaN-based vertical conducting diodes on -SiC substrates
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journal
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October 2006 |
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Temperature dependence of hole impact ionization coefficients in 4H and 6H-SiC
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journal
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February 1999 |
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Electrical characterisation of epitaxial AlN/Nb2N heterostructures grown by molecular beam epitaxy
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journal
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July 2016 |
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High voltage and high current density vertical GaN power diodes
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journal
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June 2016 |
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Al0 .3Ga0.7N PN diode with breakdown voltage >1600 V
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journal
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July 2016 |
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Role of defects in producing negative temperature dependence of breakdown voltage in SiC
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journal
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June 1998 |
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Charge Multiplication in GaP p‐n Junctions
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journal
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December 1965 |
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AVALANCHE BREAKDOWN VOLTAGES OF ABRUPT AND LINEARLY GRADED p‐n JUNCTIONS IN Ge, Si, GaAs, AND GaP
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journal
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March 1966 |
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High critical electric field of AlxGa1−xN p-i-n vertical conducting diodes on n-SiC substrates
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journal
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April 2006 |
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Emission probability of hot electrons from silicon into silicon dioxide
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journal
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January 1977 |
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Impact ionization coefficient and energy distribution function at high fields in semiconductors
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journal
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June 1989 |
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Extreme dielectric strength in boron doped homoepitaxial diamond
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journal
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November 2010 |
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Gallium oxide (Ga 2 O 3 ) metal-semiconductor field-effect transistors on single-crystal β-Ga 2 O 3 (010) substrates
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journal
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January 2012 |
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Zr/oxidized diamond interface for high power Schottky diodes
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journal
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February 2014 |
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Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN p-n diodes with avalanche breakdown
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journal
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December 2015 |
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1-kV vertical Ga 2 O 3 field-plated Schottky barrier diodes
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journal
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March 2017 |
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Experimental determination of impact ionization coefficients of electrons and holes in gallium nitride using homojunction structures
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journal
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August 2019 |
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Lucky-drift mechanism for impact ionisation in semiconductors
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journal
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June 1983 |
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A model for impact ionisation in wide-gap semiconductors
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journal
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August 1983 |
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Internal Field Emission at Narrow Silicon and Germanium p − n Junctions
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journal
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April 1960 |
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Theory of Electron Multiplication in Silicon and Germanium
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journal
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September 1954 |
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Wide bandgap compound semiconductors for superior high-voltage unipolar power devices
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journal
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January 1994 |
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Power semiconductor device figure of merit for high-frequency applications
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journal
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October 1989 |
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Surface impact ionization in silicon devices
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conference
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January 1987 |
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Performance Limits of Vertical Unipolar Power Devices in GaN and 4H-SiC
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journal
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June 2020 |
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GaN-Based RF Power Devices and Amplifiers
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journal
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February 2008 |
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Dielectric breakdown threshold, two-photon absorption, and other optical damage mechanisms in diamond
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journal
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August 1978 |
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Vertical GaN p-n Junction Diodes With High Breakdown Voltages Over 4 kV
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journal
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November 2015 |
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Vertical Power p-n Diodes Based on Bulk GaN
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journal
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February 2015 |
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An assessment of wide bandgap semiconductors for power devices
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journal
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May 2003 |
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Power-Law Distributions in Empirical Data
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journal
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November 2009 |
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Device-Quality $\beta$-Ga$_{2}$O$_{3}$ Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy
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journal
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February 2012 |
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High Critical Electric Field Exceeding 8 MV/cm Measured Using an AlGaN p – i – n Vertical Conducting Diode on n -SiC Substrate
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journal
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April 2007 |
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Switching Behavior and Forward Bias Degradation of 700V, 0.2A, β-Ga 2 O 3 Vertical Geometry Rectifiers
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journal
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January 2019 |
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2300V Reverse Breakdown Voltage Ga 2 O 3 Schottky Rectifiers
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journal
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January 2018 |
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Measurements of Breakdown Field and Forward Current Stability in 3C-SiC pn Junction Diodes Grown on Step-Free 4H-SiC
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journal
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October 2006 |
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Temperature Dependence of Impact Ionization Coefficients in 4H-SiC
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journal
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February 2014 |
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4.9 kV breakdown voltage vertical GaN p–n junction diodes with high avalanche capability
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journal
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April 2019 |