Global perspectives of the bulk electronic structure of URu2Si 2 from angle-resolved photoemission
AbstractPrevious high-resolution angle-resolved photoemission (ARPES) studies of URu2Si2 have characterized the temperature-dependent behavior of narrow-band states close to the Fermi level (EF) at low photon energies near the zone center, with an emphasis on electronic reconstruction due to Brillouin zone folding. A substantial challenge to a proper description is that these states interact with other hole-band states that are generally absent from bulk-sensitive soft x-ray ARPES measurements. Here we provide a more global k-space context for the presence of such states and their relation to the bulk Fermi surface (FS) topology using synchrotron-based wide-angle and photon energy-dependent ARPES mapping of the electronic structure using photon energies intermediate between the low-energy regime and the high-energy soft x-ray regime. Small-spot spatial dependence, f-resonant photoemission, Si 2p core-levels, x-ray polarization, surface-dosing modification, and theoretical surface slab calculations are employed to assist identification of bulk versus surface state character of the E F-crossing bands and their relation to specific U- or Si-terminations of the cleaved surface. The bulk FS topology is critically compared to density functional theory (DFT) and to dynamical mean field theory calculations. In addition to clarifying some aspects of the previously measured high symmetry Γ, Z and X points, incommensurate 0.6a* nested Fermi-edge states located along Z–N–Z are found to be distinctly different from the DFT FS prediction. The temperature evolution of these states above THO, combined with a more detailed theoretical investigation of this region, suggests a key role of the N-point in the hidden order transition.
- Research Organization:
- Los Alamos National Laboratory (LANL), Los Alamos, NM (United States); Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
- Sponsoring Organization:
- USDOE; USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division; National Science Foundation (NSF); National Research Foundation of Korea (NRF); USDOE Office of Science (SC), Basic Energy Sciences
- Grant/Contract Number:
- AC02-05CH11231; 89233218CNA000001; FG02-04ER46105; FG02-07ER46379; DMR-1810310; DMR-1709229; 2019R1A2C1004929
- OSTI ID:
- 1841280
- Alternate ID(s):
- OSTI ID: 1835626; OSTI ID: 1878056; OSTI ID: 1894074
- Report Number(s):
- LA-UR-21-29230
- Journal Information:
- Electronic Structure, Journal Name: Electronic Structure Vol. 4 Journal Issue: 1; ISSN 2516-1075
- Publisher:
- IOP ScienceCopyright Statement
- Country of Publication:
- United Kingdom
- Language:
- English
Similar Records
Topological surface states on the nonpolar (110) and (111) surfaces of SmB6
Antisymmetric linear magnetoresistance and the planar Hall effect