Radiation defect dynamics in solids studied by pulsed ion beams

Wallace, J. B.; Bayu Aji, L. B.; Kucheyev, S. O.

doi:10.1016/j.nimb.2018.10.044

Title: Radiation defect dynamics in solids studied by pulsed ion beams

Journal Article · Thu Nov 15 00:00:00 EST 2018 · Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms

DOI:https://doi.org/10.1016/j.nimb.2018.10.044· OSTI ID:1840126

Wallace, J. B. ^[1]; Bayu Aji, L. B. ^[2]; Kucheyev, S. O. ^[2]

Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Texas A & M Univ., College Station, TX (United States)
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

The buildup of radiation damage is often a dynamic phenomenon proceeding via migration and interaction of point defects ballistically generated in collision cascades. In this work, we describe how the dynamic aspects of damage formation via inter-cascade defect interaction can be studied by pulsed ion beam bombardment. We illustrate the pulsed beam method by an example for Si bombarded at 100°C with 1.35 MeV Xe ions and compare with previously reported data for 0.5 MeV Xe ion irradiation. Results reveal that the time constant of defect relaxation strongly depends on both ion energy and the depth from the sample surface. This observation cannot be entirely explained as an effect of the collision cascade density on defect interaction dynamics, based on depth dependencies of cascade densities calculated with a recently developed model that accounts for the fractal nature of cascades. There results call for future systematic studies to better understand ion energy and cascade density effects on defect relaxation dynamics in Si.

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Research Organization:: Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA); USDOE Office of Nuclear Energy (NE)

Grant/Contract Number:: AC52-07NA27344

OSTI ID:: 1840126

Alternate ID(s):: OSTI ID: 1810655

Report Number(s):: LLNL-JRNL-758637; LLNL-JRNL-714159; 945203

Journal Information:: Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms, Vol. 460; ISSN 0168-583X

Publisher:: ElsevierCopyright Statement

Country of Publication:: United States

Language:: English

References (19)

Pulsed Ion Beam Measurement of the Time Constant of Dynamic Annealing in Si Myers, M. T.; Charnvanichborikarn, S.; Shao, L. Physical Review Letters, Vol. 109, Issue 9 https://doi.org/10.1103/PhysRevLett.109.095502	journal	August 2012
Displacement Damage in Irradiated Metals and Semiconductors Averback, R. S.; De La Rubia, T. Diaz Solid State Physics - Advances in Research and Applications https://doi.org/10.1016/S0081-1947(08)60193-9	book	January 1998
Modeling microstructural evolution in irradiated materials with cluster dynamics methods: A review Kohnert, Aaron A.; Wirth, Brian D.; Capolungo, Laurent Computational Materials Science, Vol. 149 https://doi.org/10.1016/j.commatsci.2018.02.049	journal	June 2018
Generation of point defects in crystalline silicon by MeV heavy ions: Dose rate and temperature dependence Svensson, B. G.; Jagadish, C.; Williams, J. S. Physical Review Letters, Vol. 71, Issue 12 https://doi.org/10.1103/PhysRevLett.71.1860	journal	September 1993
Influence of dose rate and temperature on ion-beam-induced defect evolution in Si investigated by channeling implantation at different doses Posselt, M.; Bischoff, L.; Teichert, J. Applied Physics Letters, Vol. 79, Issue 10 https://doi.org/10.1063/1.1396319	journal	September 2001
Deterministic Role of Collision Cascade Density in Radiation Defect Dynamics in Si Wallace, J. B.; Aji, L. B. Bayu; Shao, L. Physical Review Letters, Vol. 120, Issue 21 https://doi.org/10.1103/PhysRevLett.120.216101	journal	May 2018
Some new aspects for the evaluation of disorder profiles in silicon by backscattering Schmid, K. Radiation Effects, Vol. 17, Issue 3-4 https://doi.org/10.1080/00337577308232616	journal	January 1973
SRIM – The stopping and range of ions in matter (2010) Ziegler, James F.; Ziegler, M. D.; Biersack, J. P. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 268, Issue 11-12 https://doi.org/10.1016/j.nimb.2010.02.091	journal	June 2010
Fractal analysis of collision cascades in pulsed-ion-beam-irradiated solids Wallace, J. B.; Aji, L. B. Bayu; Shao, L. Scientific Reports, Vol. 7, Issue 1 https://doi.org/10.1038/s41598-017-17781-5	journal	December 2017
Pulsed ion beam measurement of defect diffusion lengths in irradiated solids Charnvanichborikarn, S.; Myers, M. T.; Shao, L. Journal of Physics: Condensed Matter, Vol. 25, Issue 16 https://doi.org/10.1088/0953-8984/25/16/162203	journal	March 2013
Time constant of defect relaxation in ion-irradiated 3C-SiC Wallace, J. B.; Bayu Aji, L. B.; Shao, L. Applied Physics Letters, Vol. 106, Issue 20 https://doi.org/10.1063/1.4921471	journal	May 2015
Non-monotonic temperature dependence of radiation defect dynamics in silicon carbide Bayu Aji, L. B.; Wallace, J. B.; Shao, L. Scientific Reports, Vol. 6, Issue 1 https://doi.org/10.1038/srep30931	journal	August 2016
Effective defect diffusion lengths in Ar-ion bombarded 3 C -SiC Bayu Aji, L. B.; Wallace, J. B.; Shao, L. Journal of Physics D: Applied Physics, Vol. 49, Issue 19 https://doi.org/10.1088/0022-3727/49/19/19LT01	journal	April 2016
The role of Frenkel defect diffusion in dynamic annealing in ion-irradiated Si Wallace, J. B.; Aji, L. B. Bayu; Martin, A. A. Scientific Reports, Vol. 7, Issue 1 https://doi.org/10.1038/srep39754	journal	January 2017
Radiation defect dynamics in GaAs studied by pulsed ion beams Bayu Aji, L. B.; Wallace, J. B.; Kucheyev, S. O. Journal of Applied Physics, Vol. 124, Issue 2 https://doi.org/10.1063/1.5038018	journal	July 2018
Effects of collision cascade density on radiation defect dynamics in 3C-SiC Bayu Aji, L. B.; Wallace, J. B.; Kucheyev, S. O. Scientific Reports, Vol. 7, Issue 1 https://doi.org/10.1038/srep44703	journal	March 2017
Dynamic annealing in Ge studied by pulsed ion beams Wallace, J. B.; Bayu Aji, L. B.; Shao, L. Scientific Reports, Vol. 7, Issue 1 https://doi.org/10.1038/s41598-017-13161-1	journal	October 2017
A method for the solution of certain non-linear problems in least squares Levenberg, Kenneth Quarterly of Applied Mathematics, Vol. 2, Issue 2 https://doi.org/10.1090/qam/10666	journal	January 1944
Effects of the ion energy on damage production in MeV ion-implanted GaAs Wesch, W.; Wendler, E.; Dharmarasu, N. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 175-177 https://doi.org/10.1016/S0168-583X(00)00634-0	journal	April 2001

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