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Using Floating-Gate Memory to Train Ideal Accuracy Neural Networks

Journal Article · · IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Not Available
Research Organization:
Sandia National Laboratories (SNL-CA), Livermore, CA (United States)
Sponsoring Organization:
USDOE; USDOE National Nuclear Security Administration (NNSA)
Grant/Contract Number:
AC04-94AL85000; NA0003525
OSTI ID:
1839840
Alternate ID(s):
OSTI ID: 1501628
Report Number(s):
SAND--2019-0981J; 8663600
Journal Information:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Journal Name: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits Journal Issue: 1 Vol. 5; ISSN 2329-9231
Publisher:
Institute of Electrical and Electronics EngineersCopyright Statement
Country of Publication:
United States
Language:
English

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