Silicon Carbide (SiC) Foam for Molten Salt Containment in CSP-GEN3 Systems
Technical Report
·
OSTI ID:1838463
- Touchstone Research Laboratory; Touchstone Research Laboratory; Touchstone Research Laboratory; Touchstone Research Laboratory
- Research Organization:
- Touchstone Research Laboratory
- Sponsoring Organization:
- USDOE; USDOE Office of Science (SC), Engineering & Technology. Office of Small Business Innovation Research (SBIR) and Small Business Technology Transfer (STTR) Programs
- DOE Contract Number:
- SC0018678
- OSTI ID:
- 1838463
- Report Number(s):
- Final Report DE-SC0018678
- Country of Publication:
- United States
- Language:
- English
Similar Records
Silicon Carbide (SiC) Foam for Molten Salt Containment in CSP-GEN3 Systems
Molten Salt Technology Pathway CSP Gen3 Roadmap.
High-temperature (750 – 800°C) Silicon Carbide Receiver Assembly for High Efficiency Gen3 Molten Salt Concentrating Solar Power
Technical Report
·
Mon Apr 15 00:00:00 EDT 2019
·
OSTI ID:1507005
Molten Salt Technology Pathway CSP Gen3 Roadmap.
Conference
·
Sat Dec 31 23:00:00 EST 2016
·
OSTI ID:1427100
High-temperature (750 – 800°C) Silicon Carbide Receiver Assembly for High Efficiency Gen3 Molten Salt Concentrating Solar Power
Technical Report
·
Tue Sep 15 00:00:00 EDT 2020
·
OSTI ID:1660378