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In situ measurements and growth kinetics of silicon carbide chemical vapor deposition from methyltrichlorosilane
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Thin film growth of silicon cardide from methyl-trichloro-silane by RF plasma-enhanced CVD
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Multicomponent Mass Transport in Chemical Vapor Infiltration
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Kinetics and Mechanism of Pyrolysis of Methyltrichlorosilane
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ON THE KINETICS OF THE CVD OF Si FROM SiH 2 Cl 2 /H 2 AND SiC FROM CH 3 SiCl 3 /H 2 IN A VERTICAL TUBULAR HOT-WALL REACTOR
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Reaction and Diffusion Kinetics During the Initial Stages of Isothermal Chemical Vapor Infiltration
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Modeling of Pore Structure Evolution Between Bundles of Plain Woven Fabrics During Chemical Vapor Infiltration Process: The Influence of Preform Geometry
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3D printing of high‐purity silicon carbide
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Structural Model Effects on the Predictions of Chemical Vapor Infiltration Models
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Steady‐State Multiplicity Phenomena in the Deposition of Silicon Carbide
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On the Homogeneous Chemistry of the Thermal Decomposition of Methyltrichlorosilane: Thermodynamic Analysis and Kinetic Modeling
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Kinetic study of silicon carbide deposited from methyltrichlorosilane precursor
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3-D Modeling of Forced-Flow Thermal-Gradient CVI for Ceramic Composite Fabrication
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Heterogeneous Kinetics of The Chemical Vapor Deposition of Silicon Carbide From Methyltrichlorosilane
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