Reducing sputter induced stress and damage for efficient perovskite/silicon tandem solar cells
- Chinese Academy of Sciences (CAS), Beijing (China); Univ. of Nebraska, Lincoln, NE (United States)
- Univ. of Nebraska, Lincoln, NE (United States); Univ. of North Carolina, Chapel Hill, NC (United States)
- Arizona State Univ., Tempe, AZ (United States)
- Chinese Academy of Sciences (CAS), Beijing (China)
- Univ. of North Carolina, Chapel Hill, NC (United States)
Reducing damages caused by sputtering of transparent conductive oxide (TCO) electrodes is critical in achieving highly efficient and stable perovskite/silicon tandem solar cells. Here we study the sputter caused damage to bathocuproine (BCP), which is widely used in highly efficient p-i-n structure single junction perovskite solar cells. While BCP buffer layer protects the underneath layers from damage, itself can be damaged by sputtering of TCOs at a wide range of target-substrate distances, supported by molecular dynamic simulation. More intriguingly, it is observed that TCO easily peeled off after sputtering when the sputtering target is close to substrate. This is ascribed to formation of stress during cooling down process after sputtering due to different thermal expansion coefficients of the layers. Our studies explain why tin oxide (SnO2) made by atomic layer deposition can replace BCP for a much better tandem device performance. SnO2 has high affinity with sputtered TCO electrode to suppress peeling-off issue and has higher bond energy to resist sputter induced damage, thus it allows a wider window of target-substrate distances than BCP during TCO sputtering. Ultimately, we demonstrate an efficient perovskite/silicon monolithic tandem solar cell with efficiency of 26.0% to illustrate the beneficial effects of reduced stress and damage.
- Research Organization:
- University of North Carolina, Chapel Hill, NC (United States)
- Sponsoring Organization:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
- Grant/Contract Number:
- EE0008749
- OSTI ID:
- 1836280
- Alternate ID(s):
- OSTI ID: 1837342; OSTI ID: 1884311; OSTI ID: 1894781
- Journal Information:
- Journal of Materials Chemistry. A, Vol. 10, Issue 3; ISSN 2050-7488
- Publisher:
- Royal Society of ChemistryCopyright Statement
- Country of Publication:
- United States
- Language:
- English
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