Charge Transfer Properties of Heterostructures Formed by Bi2O2Se and Transition Metal Dichalcogenide Monolayers

Liu, Shuangyan; He, Dawei; Tan, Congwei; Fu, Shaohua; Han, Xiuxiu; Huang, Mohan; Miao, Qing; Zhang, Xiaoxian; Wang, Yongsheng; Peng, Hailin; Zhao, Hui

doi:10.1002/smll.202106078

Charge Transfer Properties of Heterostructures Formed by Bi₂O₂Se and Transition Metal Dichalcogenide Monolayers

Journal Article · Fri Dec 03 00:00:00 EST 2021 · Small

DOI:https://doi.org/10.1002/smll.202106078· OSTI ID:1864712

^[1]; He, Dawei ^[2]; Tan, Congwei ^[3]; Fu, Shaohua ^[2]; Han, Xiuxiu ^[2]; Huang, Mohan ^[2]; Miao, Qing ^[2]; Zhang, Xiaoxian ^[2]; Wang, Yongsheng ^[2]; ^[3]; ^[4]

Beijing Jiaotong University (China); The University of Kansas
Beijing Jiaotong University (China)
Peking Univ., Beijing (China)
Univ. of Kansas, Lawrence, KS (United States)

Atomically thin bismuth oxyselenide (Bi₂O₂Se) exhibits attractive properties for electronic and optoelectronic applications, such as high charge-carrier mobility and good air stability. Recently, the development of Bi₂O₂Se-based heterostructures have attracted enormous interests with promising prospects for diverse device applications. Although the electrical properties of Bi₂O₂Se-based heterostructures have been widely studied, the interlayer charge transfer in these heterostructures remains elusive, despite its importance in harnessing their emergent functionalities. Here, a comprehensive experimental investigation on the interlayer charge transfer properties of two heterostructures formed by Bi₂O₂Se and representative transition metal dichalcogenides (namely, WS₂/Bi₂O₂Se and MoS₂/Bi₂O₂Se) is reported. In this work, Kelvin probe force microscopy is used to measure the work functions of the samples, which are further employed to establish type-II band alignment of both heterostructures. Photoluminescence quenching is observed in each heterostructure, suggesting high charge transfer efficiency. Time-resolved and layer-selective pump–probe measurements further prove the ultrafast interlayer charge transfer processes and formation of long-lived interlayer excitons. These results establish the feasibility of integrating 2D Bi₂O₂Se with other 2D semiconductors to fabricate heterostructures with novel charge transfer properties and provide insight for understanding the performance of optoelectronic devices based on such 2D heterostructures.

View Accepted Manuscript (DOE)

Research Organization:: Univ. of Kansas, Lawrence, KS (United States)

Sponsoring Organization:: Beijing Natural Science Foundation of China; National Natural Science Foundation of China (NSFC); USDOE; USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division

Contributing Organization:: Beijing Jiaotong University; Peking University

Grant/Contract Number:: SC0020995

OSTI ID:: 1864712

Alternate ID(s):: OSTI ID: 1834246

Journal Information:: Small, Journal Name: Small Journal Issue: 7 Vol. 18; ISSN 1613-6810

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: English

References (81)

Ultrafast Laser Spectroscopy of Two-Dimensional Materials Beyond Graphene Ceballos, Frank; Zhao, Hui Advanced Functional Materials, Vol. 27, Issue 19 https://doi.org/10.1002/adfm.201604509	journal	December 2016
High-Performance Near-Infrared Photodetector Based on Ultrathin Bi ₂ O ₂ Se Nanosheets Li, Jie; Wang, Zhenxing; Wen, Yao Advanced Functional Materials, Vol. 28, Issue 10 https://doi.org/10.1002/adfm.201706437	journal	January 2018
Interfacial Charge Behavior Modulation in Perovskite Quantum Dot-Monolayer MoS ₂ 0D-2D Mixed-Dimensional van der Waals Heterostructures Wu, Hualin; Kang, Zhuo; Zhang, Zihan Advanced Functional Materials, Vol. 28, Issue 34 https://doi.org/10.1002/adfm.201802015	journal	June 2018
Controlled Vapor–Solid Deposition of Millimeter‐Size Single Crystal 2D Bi ₂ O ₂ Se for High‐Performance Phototransistors Khan, Usman; Luo, Yuting; Tang, Lei Advanced Functional Materials, Vol. 29, Issue 14 https://doi.org/10.1002/adfm.201807979	journal	February 2019
Sensitive and Ultrabroadband Phototransistor Based on Two‐Dimensional Bi ₂ O ₂ Se Nanosheets Tong, Tong; Chen, Yunfeng; Qin, Shuchao Advanced Functional Materials, Vol. 29, Issue 50 https://doi.org/10.1002/adfm.201905806	journal	September 2019
Self‐Driven WSe ₂ /Bi ₂ O ₂ Se Van der Waals Heterostructure Photodetectors with High Light On/Off Ratio and Fast Response Luo, Peng; Wang, Fakun; Qu, Jingyu Advanced Functional Materials, Vol. 31, Issue 8 https://doi.org/10.1002/adfm.202008351	journal	November 2020
Broadband Bi ₂ O ₂ Se Photodetectors from Infrared to Terahertz Chen, Yunfeng; Ma, Wanli; Tan, Congwei Advanced Functional Materials, Vol. 31, Issue 14 https://doi.org/10.1002/adfm.202009554	journal	January 2021
Epitaxial Growth of 2D Bi ₂ O ₂ Se Nanoplates/1D CsPbBr ₃ Nanowires Mixed‐Dimensional Heterostructures with Enhanced Optoelectronic Properties Fan, Chao; Dai, Beibei; Liang, Huikang Advanced Functional Materials, Vol. 31, Issue 16 https://doi.org/10.1002/adfm.202010263	journal	February 2021
Chemical Patterning of High-Mobility Semiconducting 2D Bi ₂ O ₂ Se Crystals for Integrated Optoelectronic Devices Wu, Jinxiong; Liu, Yujing; Tan, Zhenjun Advanced Materials, Vol. 29, Issue 44 https://doi.org/10.1002/adma.201704060	journal	October 2017
An Ultrabroadband Mid-Infrared Pulsed Optical Switch Employing Solution-Processed Bismuth Oxyselenide Tian, Xiangling; Luo, Hongyu; Wei, Rongfei Advanced Materials, Vol. 30, Issue 31 https://doi.org/10.1002/adma.201801021	journal	June 2018
Ultrasensitive 2D Bi ₂ O ₂ Se Phototransistors on Silicon Substrates Fu, Qundong; Zhu, Chao; Zhao, Xiaoxu Advanced Materials, Vol. 31, Issue 1 https://doi.org/10.1002/adma.201804945	journal	November 2018
Truly Concomitant and Independently Expressed Short‐ and Long‐Term Plasticity in a Bi ₂ O ₂ Se‐Based Three‐Terminal Memristor Zhang, Ziyang; Li, Tianran; Wu, Yujie Advanced Materials, Vol. 31, Issue 3 https://doi.org/10.1002/adma.201805769	journal	September 2018
Molecular Beam Epitaxy and Electronic Structure of Atomically Thin Oxyselenide Films Liang, Yan; Chen, Yujie; Sun, Yuanwei Advanced Materials, Vol. 31, Issue 39 https://doi.org/10.1002/adma.201901964	journal	August 2019
Unveiling the Fine Structural Distortion of Atomically Thin Bi ₂ O ₂ Se by Third‐Harmonic Generation Liang, Jing; Tu, Teng; Chen, Guanchu Advanced Materials, Vol. 32, Issue 31 https://doi.org/10.1002/adma.202002831	journal	June 2020
Gate‐Tunable Polar Optical Phonon to Piezoelectric Scattering in Few‐Layer Bi ₂ O ₂ Se for High‐Performance Thermoelectrics Yang, Fang; Wu, Jing; Suwardi, Ady Advanced Materials, Vol. 33, Issue 4 https://doi.org/10.1002/adma.202004786	journal	December 2020
Optical Properties and Photocarrier Dynamics of Bi ₂ O ₂ Se Monolayer and Nanoplates Liu, Shuangyan; Tan, Congwei; He, Dawei Advanced Optical Materials, Vol. 8, Issue 6 https://doi.org/10.1002/adom.201901567	journal	March 2020
Sub 10 nm Bilayer Bi ₂ O ₂ Se Transistors Yang, Jie; Quhe, Ruge; Li, Qiuhui Advanced Electronic Materials https://doi.org/10.1002/aelm.201800720	journal	February 2019
Exploiting Two‐Dimensional Bi ₂ O ₂ Se for Trace Oxygen Detection Xu, Shipu; Fu, Huixia; Tian, Ye Angewandte Chemie International Edition, Vol. 59, Issue 41 https://doi.org/10.1002/anie.202006745	journal	August 2020
Exploitation of Bi ₂ O ₂ Se/graphene van der Waals heterojunction for creating efficient photodetectors and short‐channel field‐effect transistors Tan, Congwei; Xu, Shipu; Tan, Zhenjun InfoMat, Vol. 1, Issue 3 https://doi.org/10.1002/inf2.12025	journal	August 2019
Temporally Resolving Synchronous Degenerate and Nondegenerate Two-Photon Absorption in 2D Semiconducting Monolayers Cui, Qiannan; Li, Yuanyuan; Chang, Jianhua Laser & Photonics Reviews, Vol. 13, Issue 2 https://doi.org/10.1002/lpor.201800225	journal	December 2018
Broadband photodetection of 2D Bi2O2Se–MoSe2 heterostructure Yang, Tao; Li, Xing; Wang, Liming Journal of Materials Science, Vol. 54, Issue 24 https://doi.org/10.1007/s10853-019-03963-1	journal	September 2019
Local electrical characterization of two-dimensional materials with functional atomic force microscopy Hussain, Sabir; Xu, Kunqi; Ye, Shili Frontiers of Physics, Vol. 14, Issue 3 https://doi.org/10.1007/s11467-018-0879-7	journal	January 2019
Thermal conductivity determination of suspended mono- and bilayer WS2 by Raman spectroscopy Peimyoo, Namphung; Shang, Jingzhi; Yang, Weihuang Nano Research, Vol. 8, Issue 4 https://doi.org/10.1007/s12274-014-0602-0	journal	November 2014
Intrinsic carrier multiplication in layered Bi2O2Se avalanche photodiodes with gain bandwidth product exceeding 1 GHz Sangwan, Vinod K.; Kang, Joohoon; Lam, David Nano Research, Vol. 14, Issue 6 https://doi.org/10.1007/s12274-020-3059-3	journal	September 2020
Defect Heterogeneity in Monolayer WS ₂ Unveiled by Work Function Variance Wang, Xinyun; Dan, Jiadong; Hu, Zhenliang Chemistry of Materials, Vol. 31, Issue 19 https://doi.org/10.1021/acs.chemmater.9b02157	journal	August 2019
Raman Spectra and Strain Effects in Bismuth Oxychalcogenides Cheng, Ting; Tan, Congwei; Zhang, Shuqing The Journal of Physical Chemistry C, Vol. 122, Issue 34 https://doi.org/10.1021/acs.jpcc.8b05475	journal	August 2018
Magnitude and Spatial Distribution Control of the Supercurrent in Bi ₂ O ₂ Se-Based Josephson Junction Ying, Jianghua; He, Jiangbo; Yang, Guang Nano Letters, Vol. 20, Issue 4 https://doi.org/10.1021/acs.nanolett.0c00025	journal	March 2020
Probing Interlayer Interactions in Transition Metal Dichalcogenide Heterostructures by Optical Spectroscopy: MoS ₂ /WS ₂ and MoSe ₂ /WSe ₂ Rigosi, Albert F.; Hill, Heather M.; Li, Yilei Nano Letters, Vol. 15, Issue 8 https://doi.org/10.1021/acs.nanolett.5b01055	journal	July 2015
Direct Observation of Ultrafast Exciton Formation in a Monolayer of WSe ₂ Steinleitner, Philipp; Merkl, Philipp; Nagler, Philipp Nano Letters, Vol. 17, Issue 3 https://doi.org/10.1021/acs.nanolett.6b04422	journal	February 2017
Highly Efficient and Anomalous Charge Transfer in van der Waals Trilayer Semiconductors Ceballos, Frank; Ju, Ming-Gang; Lane, Samuel D. Nano Letters, Vol. 17, Issue 3 https://doi.org/10.1021/acs.nanolett.6b04815	journal	February 2017
Controlled Synthesis of High-Mobility Atomically Thin Bismuth Oxyselenide Crystals Wu, Jinxiong; Tan, Congwei; Tan, Zhenjun Nano Letters, Vol. 17, Issue 5 https://doi.org/10.1021/acs.nanolett.7b00335	journal	April 2017
Interfacial Charge Transfer Circumventing Momentum Mismatch at Two-Dimensional van der Waals Heterojunctions Zhu, Haiming; Wang, Jue; Gong, Zizhou Nano Letters, Vol. 17, Issue 6 https://doi.org/10.1021/acs.nanolett.7b00748	journal	May 2017
Low Residual Carrier Concentration and High Mobility in 2D Semiconducting Bi ₂ O ₂ Se Wu, Jinxiong; Qiu, Chenguang; Fu, Huixia Nano Letters, Vol. 19, Issue 1 https://doi.org/10.1021/acs.nanolett.8b03696	journal	December 2018
Wafer-Scale Growth of Single-Crystal 2D Semiconductor on Perovskite Oxides for High-Performance Transistors Tan, Congwei; Tang, Min; Wu, Jinxiong Nano Letters, Vol. 19, Issue 3 https://doi.org/10.1021/acs.nanolett.9b00381	journal	February 2019
Ultrathin Free-Standing Nanosheets of Bi ₂ O ₂ Se: Room Temperature Ferroelectricity in Self-Assembled Charged Layered Heterostructure Ghosh, Tanmoy; Samanta, Manisha; Vasdev, Aastha Nano Letters, Vol. 19, Issue 8 https://doi.org/10.1021/acs.nanolett.9b02312	journal	July 2019
Inclined Ultrathin Bi ₂ O ₂ Se Films: A Building Block for Functional van der Waals Heterostructures Hong, Chengyun; Tao, Ye; Nie, Anmin ACS Nano, Vol. 14, Issue 12 https://doi.org/10.1021/acsnano.0c05300	journal	November 2020
Low-Temperature and High-Quality Growth of Bi ₂ O ₂ Se Layered Semiconductors via Cracking Metal–Organic Chemical Vapor Deposition Kang, Minsoo; Chai, Hyun-Jun; Jeong, Han Beom ACS Nano, Vol. 15, Issue 5 https://doi.org/10.1021/acsnano.1c00811	journal	May 2021
Tightly Bound Trions in Transition Metal Dichalcogenide Heterostructures Bellus, Matthew Z.; Ceballos, Frank; Chiu, Hsin-Ying ACS Nano, Vol. 9, Issue 6 https://doi.org/10.1021/acsnano.5b02144	journal	May 2015
Electronic Properties of MoS ₂ –WS ₂ Heterostructures Synthesized with Two-Step Lateral Epitaxial Strategy Chen, Kun; Wan, Xi; Wen, Jinxiu ACS Nano, Vol. 9, Issue 10 https://doi.org/10.1021/acsnano.5b03188	journal	September 2015
PbSe Quantum Dots Sensitized High-Mobility Bi ₂ O ₂ Se Nanosheets for High-Performance and Broadband Photodetection Beyond 2 μm Luo, Peng; Zhuge, Fuwei; Wang, Fakun ACS Nano, Vol. 13, Issue 8 https://doi.org/10.1021/acsnano.9b03124	journal	July 2019
Linearly Polarized Excitons in Single- and Few-Layer ReS ₂ Crystals Aslan, Ozgur Burak; Chenet, Daniel A.; van der Zande, Arend M. ACS Photonics, Vol. 3, Issue 1 https://doi.org/10.1021/acsphotonics.5b00486	journal	December 2015
High-Mobility Flexible Oxyselenide Thin-Film Transistors Prepared by a Solution-Assisted Method Zhang, Congcong; Wu, Jinxiong; Sun, Yuanwei Journal of the American Chemical Society, Vol. 142, Issue 6 https://doi.org/10.1021/jacs.9b11668	journal	January 2020
Epitaxial Monolayer MoS ₂ on Mica with Novel Photoluminescence Ji, Qingqing; Zhang, Yanfeng; Gao, Teng Nano Letters, Vol. 13, Issue 8 https://doi.org/10.1021/nl401938t	journal	July 2013
Nature of Electronic States in Atomically Thin MoS₂ Field-Effect Transistors Ghatak, Subhamoy; Pal, Atindra Nath; Ghosh, Arindam ACS Nano, Vol. 5, Issue 10, p. 7707-7712 https://doi.org/10.1021/nn202852j	journal	October 2011
Evolution of Electronic Structure in Atomically Thin Sheets of WS ₂ and WSe ₂ Zhao, Weijie; Ghorannevis, Zohreh; Chu, Leiqiang ACS Nano, Vol. 7, Issue 1 https://doi.org/10.1021/nn305275h	journal	December 2012
Black Phosphorus–Monolayer MoS ₂ van der Waals Heterojunction p–n Diode Deng, Yexin; Luo, Zhe; Conrad, Nathan J. ACS Nano, Vol. 8, Issue 8 https://doi.org/10.1021/nn5027388	journal	July 2014
Ultrafast Charge Separation and Indirect Exciton Formation in a MoS ₂ –MoSe ₂ van der Waals Heterostructure Ceballos, Frank; Bellus, Matthew Z.; Chiu, Hsin-Ying ACS Nano, Vol. 8, Issue 12 https://doi.org/10.1021/nn505736z	journal	November 2014
Van der Waals heterostructures Geim, A. K.; Grigorieva, I. V. Nature, Vol. 499, Issue 7459, p. 419-425 https://doi.org/10.1038/nature12385	journal	July 2013
Ultrafast formation of interlayer hot excitons in atomically thin MoS2/WS2 heterostructures Chen, Hailong; Wen, Xiewen; Zhang, Jing Nature Communications, Vol. 7, Issue 1 https://doi.org/10.1038/ncomms12512	journal	August 2016
Observation of long-lived interlayer excitons in monolayer MoSe2–WSe2 heterostructures Rivera, Pasqual; Schaibley, John R.; Jones, Aaron M. Nature Communications, Vol. 6, Issue 1 https://doi.org/10.1038/ncomms7242	journal	February 2015
Single-layer MoS₂ transistors Radisavljevic, B.; Radenovic, A.; Brivio, J. Nature Nanotechnology, Vol. 6, Issue 3, p. 147-150 https://doi.org/10.1038/nnano.2010.279	journal	January 2011
Ultrafast charge transfer in atomically thin MoS2/WS2 heterostructures Hong, Xiaoping; Kim, Jonghwan; Shi, Su-Fei Nature Nanotechnology, Vol. 9, Issue 9 https://doi.org/10.1038/nnano.2014.167	journal	August 2014
High electron mobility and quantum oscillations in non-encapsulated ultrathin semiconducting Bi2O2Se Wu, Jinxiong; Yuan, Hongtao; Meng, Mengmeng Nature Nanotechnology, Vol. 12, Issue 6 https://doi.org/10.1038/nnano.2017.43	journal	April 2017
Ultrafast and highly sensitive infrared photodetectors based on two-dimensional oxyselenide crystals Yin, Jianbo; Tan, Zhenjun; Hong, Hao Nature Communications, Vol. 9, Issue 1 https://doi.org/10.1038/s41467-018-05874-2	journal	August 2018
Ultrafast dynamics in van der Waals heterostructures Jin, Chenhao; Ma, Eric Yue; Karni, Ouri Nature Nanotechnology, Vol. 13, Issue 11 https://doi.org/10.1038/s41565-018-0298-5	journal	November 2018
A native oxide high-κ gate dielectric for two-dimensional electronics Li, Tianran; Tu, Teng; Sun, Yuanwei Nature Electronics, Vol. 3, Issue 8 https://doi.org/10.1038/s41928-020-0444-6	journal	July 2020
Optical signature of symmetry variations and spin-valley coupling in atomically thin tungsten dichalcogenides Zeng, Hualing; Liu, Gui-Bin; Dai, Junfeng Scientific Reports, Vol. 3, Issue 1 https://doi.org/10.1038/srep01608	journal	April 2013
Identification of individual and few layers of WS2 using Raman Spectroscopy Berkdemir, Ayse; Gutiérrez, Humberto R.; Botello-Méndez, Andrés R. Scientific Reports, Vol. 3, Issue 1 https://doi.org/10.1038/srep01755	journal	April 2013
Spatiotemporal dynamics of excitons in monolayer and bulk WS ₂ He, Jiaqi; He, Dawei; Wang, Yongsheng Nanoscale, Vol. 7, Issue 21 https://doi.org/10.1039/C5NR00188A	journal	January 2015
Exciton formation in monolayer transition metal dichalcogenides Ceballos, Frank; Cui, Qiannan; Bellus, Matthew Z. Nanoscale, Vol. 8, Issue 22 https://doi.org/10.1039/C6NR02516A	journal	January 2016
Bi ₂ OS ₂ : a direct-gap two-dimensional semiconductor with high carrier mobility and surface electron states Zhang, Xiwen; Wang, Bing; Niu, Xianghong Materials Horizons, Vol. 5, Issue 6 https://doi.org/10.1039/C8MH01001C	journal	January 2018
High-performance sub-10 nm monolayer Bi ₂ O ₂ Se transistors Quhe, Ruge; Liu, Junchen; Wu, Jinxiong Nanoscale, Vol. 11, Issue 2 https://doi.org/10.1039/C8NR08852G	journal	January 2019
Highly efficient broadband photodetectors based on lithography-free Au/Bi ₂ O ₂ Se/Au heterostructures Liu, Xiaolong; Li, Ruiping; Hong, Chengyun Nanoscale, Vol. 11, Issue 43 https://doi.org/10.1039/C9NR06723J	journal	January 2019
Infrared and Raman spectra of Bi ₂ O ₂ X and Bi ₂ OX ₂ (X = S, Se, and Te) studied from first principles calculations Xu, Yao-Di; Wang, Cong; Lv, Yang-Yang RSC Advances, Vol. 9, Issue 31 https://doi.org/10.1039/C9RA02584G	journal	January 2019
Lithium nitrate-assisted hydrothermal synthesis of ultrathin Bi ₂ O ₂ Se nanosheets and their photoelectrochemical performance Sun, Yuan; Ye, Shuai; Zhang, Jing Journal of Materials Chemistry C, Vol. 8, Issue 42 https://doi.org/10.1039/D0TC04352D	journal	January 2020
Optical properties of monolayer transition metal dichalcogenides probed by spectroscopic ellipsometry Liu, Hsiang-Lin; Shen, Chih-Chiang; Su, Sheng-Han Applied Physics Letters, Vol. 105, Issue 20 https://doi.org/10.1063/1.4901836	journal	November 2014
Observation of bimolecular recombination in high mobility semiconductor Bi ₂ O ₂ Se using ultrafast spectroscopy Zhu, Chunhui; Tong, Tong; Liu, Yujie Applied Physics Letters, Vol. 113, Issue 6 https://doi.org/10.1063/1.5037026	journal	August 2018
A type-I van der Waals heterobilayer of WSe ₂ /MoTe ₂ Li, Ming; Bellus, Matthew Z.; Dai, Jun Nanotechnology, Vol. 29, Issue 33 https://doi.org/10.1088/1361-6528/aac73a	journal	June 2018
Interlayer exciton dynamics in a dichalcogenide monolayer heterostructure Nagler, Philipp; Plechinger, Gerd; Ballottin, Mariana V. 2D Materials, Vol. 4, Issue 2 https://doi.org/10.1088/2053-1583/aa7352	journal	June 2017
Direct determination of momentum-resolved electron transfer in the photoexcited van der Waals heterobilayer W S 2 / Mo S 2 Liu, Fang; Li, Qiuyang; Zhu, X. -Y. Physical Review B, Vol. 101, Issue 20 https://doi.org/10.1103/PhysRevB.101.201405	journal	May 2020
All-optical control of charge transfer and interlayer excitons in transition metal dichalcogenide heterostructures Zereshki, Peymon; Valencia-Acuna, Pavel; Zhao, Hui Physical Review B, Vol. 103, Issue 16 https://doi.org/10.1103/PhysRevB.103.165416	journal	April 2021
Symmetry-dependent phonon renormalization in monolayer MoS 2 transistor Chakraborty, Biswanath; Bera, Achintya; Muthu, D. V. S. Physical Review B, Vol. 85, Issue 16 https://doi.org/10.1103/PhysRevB.85.161403	journal	April 2012
Band alignment of two-dimensional semiconductors for designing heterostructures with momentum space matching Özçelik, V. Ongun; Azadani, Javad G.; Yang, Ce Physical Review B, Vol. 94, Issue 3 https://doi.org/10.1103/PhysRevB.94.035125	journal	July 2016
Self-modulation doping effect in the high-mobility layered semiconductor Bi 2 O 2 Se Fu, Huixia; Wu, Jinxiong; Peng, Hailin Physical Review B, Vol. 97, Issue 24 https://doi.org/10.1103/PhysRevB.97.241203	journal	June 2018
Separating electrons and holes by monolayer increments in van der Waals heterostructures Ceballos, Frank; Zereshki, Peymon; Zhao, Hui Physical Review Materials, Vol. 1, Issue 4 https://doi.org/10.1103/PhysRevMaterials.1.044001	journal	September 2017
Layered Semiconductor Bi ₂ O ₂ Se for Broadband Pulse Generation in the Near-Infrared Xu, Rui; Wang, Sheng; Li, Yao IEEE Photonics Technology Letters, Vol. 31, Issue 13 https://doi.org/10.1109/LPT.2019.2917472	journal	July 2019
Enhanced Thermoelectric Properties of Bi ₂ O ₂ Se Ceramics by Bi Deficiencies Zhan, Bin; Liu, Yaochun; Tan, Xing Journal of the American Ceramic Society, Vol. 98, Issue 8 https://doi.org/10.1111/jace.13619	journal	May 2015
Enhanced thermoelectric performance of n -type Bi ₂ O ₂ Se by Cl-doping at Se site Tan, Xing; Lan, Jin-le; Ren, Guangkun Journal of the American Ceramic Society, Vol. 100, Issue 4 https://doi.org/10.1111/jace.14726	journal	January 2017
Electronic structures and unusually robust bandgap in an ultrahigh-mobility layered oxide semiconductor, Bi ₂ O ₂ Se Chen, Cheng; Wang, Meixiao; Wu, Jinxiong Science Advances, Vol. 4, Issue 9 https://doi.org/10.1126/sciadv.aat8355	journal	September 2018
Recording interfacial currents on the subnanometer length and femtosecond time scale by terahertz emission Ma, Eric Yue; Guzelturk, Burak; Li, Guoqing Science Advances, Vol. 5, Issue 2 https://doi.org/10.1126/sciadv.aau0073	journal	February 2019
2D materials and van der Waals heterostructures Novoselov, K. S.; Mishchenko, A.; Carvalho, A. Science, Vol. 353, Issue 6298 https://doi.org/10.1126/science.aac9439	journal	July 2016

Similar Records

Charge transfer in transition metal dichalcogenide alloy heterostructures

Journal Article · Mon Feb 17 19:00:00 EST 2025 · Applied Physics Letters · OSTI ID:2551844

Ultrafast Interlayer Charge Transfer between Bilayer PtSe₂ and Monolayer WS₂

Journal Article · Thu Nov 18 19:00:00 EST 2021 · ACS Applied Materials and Interfaces · OSTI ID:1864724

Related Subjects

36 MATERIALS SCIENCE
Bi2O2Se
band structures
charge transfer
transition metal dichalcogenides
van der Waals heterostructures

Charge Transfer Properties of Heterostructures Formed by Bi2O2Se and Transition Metal Dichalcogenide Monolayers

Citation Formats

References (81)

Similar Records

Related Subjects

Charge Transfer Properties of Heterostructures Formed by Bi₂O₂Se and Transition Metal Dichalcogenide Monolayers