Atomistic modeling of radiation damage in crystalline materials

Deo, Chaitanya S.; Chen, Elton Y.; Dingeville, Rémi

doi:10.1088/1361-651x/ac2f83

Atomistic modeling of radiation damage in crystalline materials

Journal Article · Wed Dec 22 23:00:00 EST 2021 · Modelling and Simulation in Materials Science and Engineering

DOI:https://doi.org/10.1088/1361-651x/ac2f83· OSTI ID:1834126

^[1]; Chen, Elton Y. ^[2]; ^[3]

Georgia Inst. of Technology, Atlanta, GA (United States)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Georgia Inst. of Technology, Atlanta, GA (United States); Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

This review discusses atomistic modeling techniques used to simulate radiation damage in crystalline materials. Radiation damage due to energetic particles results in the formation of defects. The subsequent evolution of these defects over multiple length and time scales requiring numerous simulations techniques to model the gamut of behaviors. This work focuses attention on current and new methodologies at the atomistic scale regarding the mechanisms of defect formation at the primary damage state.

View Accepted Manuscript (DOE)

Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: NA0003525

OSTI ID:: 1834126

Report Number(s):: SAND--2021-12266J; 700385

Journal Information:: Modelling and Simulation in Materials Science and Engineering, Journal Name: Modelling and Simulation in Materials Science and Engineering Journal Issue: 2 Vol. 30; ISSN 0965-0393

Publisher:: IOP PublishingCopyright Statement

Country of Publication:: United States

Language:: English

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