Phonon engineering of boron nitride via isotopic enrichment

He, Mingze; Lindsay, Lucas; Beechem, Thomas E.; Folland, Thomas; Matson, Joseph; Watanabe, Kenji; Zavalin, Andrey; Ueda, Akira; Collins, Warren. E.; Taniguchi, Takashi; Caldwell, Joshua D.

doi:10.1557/s43578-021-00426-9

Phonon engineering of boron nitride via isotopic enrichment

Journal Article · Tue Nov 09 00:00:00 EST 2021 · Journal of Materials Research

DOI:https://doi.org/10.1557/s43578-021-00426-9· OSTI ID:1833973

He, Mingze ^[1]; ^[2]; Beechem, Thomas E. ^[3]; Folland, Thomas ^[4]; Matson, Joseph ^[1]; Watanabe, Kenji ^[5]; Zavalin, Andrey ^[6]; Ueda, Akira ^[6]; Collins, Warren. E. ^[6]; Taniguchi, Takashi ^[7]; ^[1]

Vanderbilt Univ., Nashville, TN (United States)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies (CINT)
Vanderbilt Univ., Nashville, TN (United States); Univ. of Iowa, Iowa City, IA (United States)
National Institute for Materials Science (NIMS), Tsukuba (Japan). Research Center for Functional Materials
Fisk Univ., Nashville, TN (United States). Center for Photonic Materials and Devices
National Institute for Materials Science (NIMS), Tsukuba (Japan). International Center for Materials Nanoarchitectonics

Phonon polaritons (PhPs) enable a variety of applications, yet it requires PhPs supported in the desired frequency range. The two BN allotropes (cubic and hexagonal, cBN and hBN) are of particular interest, as their optic phonons fall within the so-called molecular-fingerprint region (~ 1000–1610 cm^-1). However, there remains a spectral gap between PhPs covered by these two, limiting applications. Thus, we isotopically engineered hBN and cBN and examined the optic phonons. Furthermore, for hBN, enhancement of the optic phonon lifetimes and shifted frequencies are observed. However, lifetimes are observed to decrease with the enrichment of cBN by ¹⁰B, ¹¹B, and ¹⁵N. We propose that the reduced lifetimes are not due to intrinsic loss, but rather increased defect concentrations resulting from the modified growth, supported by first-principles calculations. Thus, reducing the extrinsic defects in isotopically engineered cBN may present a path toward overcoming these restrictions for applications in the molecular-fingerprint region.

View Accepted Manuscript (DOE)

Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: MEXT; National Science Foundation (NSF); USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC02-05CH11231; AC05-00OR22725; NA0003525

OSTI ID:: 1833973

Journal Information:: Journal of Materials Research, Journal Name: Journal of Materials Research Journal Issue: 21 Vol. 36; ISSN 0884-2914

Publisher:: Materials Research SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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