A perspective on the electro-thermal co-design of ultra-wide bandgap lateral devices

Choi, Sukwon; Graham, Samuel; Chowdhury, Srabanti; Heller, Eric R.; Tadjer, Marko J.; Moreno, Gilberto; Narumanchi, Sreekant

doi:10.1063/5.0056271

A perspective on the electro-thermal co-design of ultra-wide bandgap lateral devices

Journal Article · Fri Oct 29 00:00:00 EDT 2021 · Applied Physics Letters

DOI:https://doi.org/10.1063/5.0056271· OSTI ID:1833341

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Pennsylvania State Univ., University Park, PA (United States)
Georgia Inst. of Technology, Atlanta, GA (United States)
Stanford Univ., CA (United States)
Air Force Research Lab. (AFRL), Wright-Patterson AFB, OH (United States)
Naval Research Lab. (NRL), Washington, DC (United States)
National Renewable Energy Lab. (NREL), Golden, CO (United States)

Fundamental research and development of ultra-wide bandgap (UWBG) semiconductor devices are under way to realize next-generation power conversion and wireless communication systems. Devices based on aluminum gallium nitride (AlxGa1-xN, x is the Al composition), ..beta..-phase gallium oxide (..beta..-Ga2O3), and diamond give promise to the development of power switching devices and radio frequency power amplifiers with higher performance and efficiency than commercial wide bandgap semiconductor devices based on gallium nitride (GaN) and silicon carbide (SiC). However, one of the most critical challenges for the successful deployment of UWBG device technologies is to overcome adverse thermal effects that impact the device performance and reliability. Overheating of UWBG devices originates from the projected high power density operation and poor intrinsic thermal properties of AlxGa1-xN and ..beta..-Ga2O3. This Perspective delineates the need and process for the "electro-thermal co-design" of laterally configured UWBG electronic devices and provides a comprehensive review of current state-of-the-art thermal characterization methods, device thermal modeling practices, and both device- and package-level thermal management solutions.

View Accepted Manuscript (DOE)

Research Organization:: National Renewable Energy Laboratory (NREL), Golden, CO (United States)

Sponsoring Organization:: USDOE

Grant/Contract Number:: AC36-08GO28308; AC36-08GO28308

OSTI ID:: 1833341

Alternate ID(s):: OSTI ID: 1828209

Report Number(s):: NREL/JA--5400-80725; MainId:77509; UUID:0304825b-0b85-48f2-b757-d7e48d82fa1a; MainAdminID:63225

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 17 Vol. 119; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Advances in Molecular Beam Epitaxy Growth of Ultra-Wide Bandgap Ga2O3 Based Alloys

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71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
electro-thermal co-design
thermal characterization
thermal management of electronics
thermal properties
ultra-wide bandgap (UWBG) semiconductors

A perspective on the electro-thermal co-design of ultra-wide bandgap lateral devices

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