Quantum Spin-Valley Hall Kink States: From Concept to Materials Design

Zhou, Tong; Cheng, Shuguang; Schleenvoigt, Michael; Schüffelgen, Peter; Jiang, Hua; Yang, Zhongqin; Žutić, Igor

doi:10.1103/physrevlett.127.116402

Title: Quantum Spin-Valley Hall Kink States: From Concept to Materials Design

Journal Article · Thu Sep 09 00:00:00 EDT 2021 · Physical Review Letters

DOI:https://doi.org/10.1103/physrevlett.127.116402· OSTI ID:1831504

^[1];

^[2]; Schleenvoigt, Michael ^[3]; Schüffelgen, Peter ^[3];

^[4]; Yang, Zhongqin ^[5];

^[1]

State Univ. of New York at Buffalo, NY (United States)
Northwest Univ., Xi’an (China)
Forschungszentrum Jülich (Germany)
Soochow Univ., Suzhou (Taiwan)
Fudan Univ., Shanghai (China)

We propose a general and tunable platform to realize high-density arrays of quantum spin-valley Hall kink (QSVHK) states with spin-valley-momentum locking based on a two-dimensional hexagonal topological insulator. Through the analysis of Berry curvature and topological charge, the QSVHK states are found to be topologically protected by the valley-inversion and time-reversal symmetries. Remarkably, the conductance of QSVHK states remains quantized against both nonmagnetic short- and long-range and magnetic long-range disorder, verified by the Green-function calculations. Based on first-principles results and our fabricated samples, we show that QSVHK states, protected with a gap up to 287 meV, can be realized in bismuthene by alloy engineering, surface functionalization, or electric field, supporting nonvolatile applications of spin-valley filters, valves, and waveguides even at room temperature.

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Research Organization:: State Univ. of New York (SUNY), Amherst, NY (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0004890

OSTI ID:: 1831504

Journal Information:: Physical Review Letters, Vol. 127, Issue 11; ISSN 0031-9007

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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