Plasma etching of wide bandgap and ultrawide bandgap semiconductors

Pearton, Stephen J.; Douglas, Erica A.; Shul, Randy J.; Ren, Fan

doi:10.1116/1.5131343

Plasma etching of wide bandgap and ultrawide bandgap semiconductors

Journal Article · Thu Jan 16 00:00:00 EST 2020 · Journal of Vacuum Science and Technology A

DOI:https://doi.org/10.1116/1.5131343· OSTI ID:2560955

; ; Shul, Randy J.;

The precise patterning of front-side mesas, backside vias, and selective removal of ternary alloys are all needed for power device fabrication in the various wide bandgap (AlGaN/GaN, SiC) and ultrawide bandgap (high Al-content alloys, boron nitride, Ga2O3, diamond) semiconductor technologies. The plasma etching conditions used are generally ion-assisted because of the strong bond strengths in these materials, and this creates challenges for the choice of masks in order to have sufficient selectivity over the semiconductor and to avoid mask erosion and micromasking issues. It can also be challenging to achieve practical etch rates without creating excessive damage in the patterned surface. The authors review the optimum choices for plasma chemistries for each of the semiconductors and acknowledge the pioneering work of John Coburn, who first delineated the ion-assisted etch mechanism.

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Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE; USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: NA0003525

OSTI ID:: 2560955

Alternate ID(s):: OSTI ID: 1831181
OSTI ID: 1591961

Report Number(s):: SAND--2020-2571J; 020802

Journal Information:: Journal of Vacuum Science and Technology A, Journal Name: Journal of Vacuum Science and Technology A Journal Issue: 2 Vol. 38; ISSN 0734-2101

Publisher:: American Vacuum SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

Journal Article · Sun Dec 03 19:00:00 EST 2017 · Advanced Electronic Materials · OSTI ID:1463923

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Band gap
Dielectric properties
Electrical properties and parameters
Electronic transport
Etching
Field effect transistors
Inductively coupled plasma
Plasma processing
Semiconductors
Thermal conductivity

Plasma etching of wide bandgap and ultrawide bandgap semiconductors

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