Thermal generation, manipulation and thermoelectric detection of skyrmions
Journal Article
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· Nature Electronics
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- Tsinghua Univ., Beijing (China)
- Foundation for Research and Technology (FORTH), Heraklion-Crete (Greece)
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS); Chonnam National Univ., Gwangju (Korea, Republic of)
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS)
- Ulsan National Institute of Science and Technology, Ulsan (Korea, Republic of)
- Ulsan National Institute of Science and Technology, Ulsan (Korea, Republic of); Daegu Gyeongbuk Institute of Science and Technology (DGIST) (Korea, Republic of)
- Peking Univ., Beijing (China)
- Polytechnic of Bari (Italy)
- University of Messina (Italy)
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS); Daegu Gyeongbuk Institute of Science and Technology (DGIST) (Korea, Republic of)
- Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
The efficient generation, manipulation and detection of magnetic skyrmions are important for the development of future spintronic devices. One approach is to use electric-current-induced spin torques. Recently, thermally induced skyrmion motion has also been observed, but wider experimental evidence and its capabilities remain limited. Here we report the thermal generation, manipulation and thermoelectric detection of nanoscale skyrmions in microstructured metallic multilayers integrated with on-chip heaters. The local application of heat can facilitate a domain morphological transition and the formation of skyrmions at the device edge, where a low energy barrier exists. Here, we observe the unidirectional diffusion of skyrmions from hot regions to cold regions, which is due to the interplay among the repulsive forces between skyrmions, thermal spin–orbit torques, entropic forces and magnonic spin torques. The thermally generated skyrmions can also be electrically detected via the Nernst voltage.
- Research Organization:
- Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
- Sponsoring Organization:
- Beijing Natural Science Foundation; National Key R&D Program of China; National Natural Science Foundation of China (NSFC); National Research Foundation of Korea (NRF); USDOE Laboratory Directed Research and Development (LDRD) Program; USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC), Biological and Environmental Research (BER) (SC-23)
- Grant/Contract Number:
- 89233218CNA000001; AC02-05CH11231
- OSTI ID:
- 1828545
- Journal Information:
- Nature Electronics, Journal Name: Nature Electronics Journal Issue: 11 Vol. 3; ISSN 2520-1131
- Publisher:
- Springer NatureCopyright Statement
- Country of Publication:
- United States
- Language:
- English
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