Effect of Ion Irradiation on Amorphous and Crystalline Ge–Se and Their Application as Phase Change Temperature Sensor

Ahmed Simon, Al-Amin; Jones, Lyle; Sakaguchi, Yoshifumi; Kunold, Henri; van Rooyen, Isabella; Mitkova, Maria

doi:10.1002/pssb.202000429

Effect of Ion Irradiation on Amorphous and Crystalline Ge–Se and Their Application as Phase Change Temperature Sensor

Journal Article · Tue Oct 20 00:00:00 EDT 2020 · Physica Status Solidi B. Basic Solid State Physics

DOI:https://doi.org/10.1002/pssb.202000429· OSTI ID:1828143

^[1]; Jones, Lyle ^[1]; Sakaguchi, Yoshifumi ^[2]; Kunold, Henri ^[1]; ^[3]; Mitkova, Maria ^[1]

Boise State Univ., ID (United States)
Comprehensive Research Organization for Science and Society, Tokai (Japan)
Idaho National Lab. (INL), Idaho Falls, ID (United States)

Research on phase change materials is predominantly focused on their application as memory devices or for temperature control which requires low phase change temperature. The Ge–Se binary chalcogenide glass system with its wide glass-forming region is a potential candidate for high-temperature and high-radiation phase change applications. In this study, the concept of employing Ge_xSe_100–x glasses to monitor high temperature (450–528 °C) using the phase change effect, is reported. Materials selection, device structure, and performance of prototype sensors are analyzed. In addition, the effect of heavy ion irradiation by Xe ions with energies of 200, 600, and 1000 keV (fluence ≈10¹⁴ cm^–2) on the Ge_xSe_100–x (x = 30, 33, 40) thin films and phase change devices is studied. The irradiation effect on the amorphous and crystalline structure of the thin films is evaluated by Raman spectroscopy and X-ray diffraction (XRD). Although the changes in the structural units of amorphous films are negligible, in crystalline films orthorhombic-GeSe₂ crystals are found to be most affected by irradiation and a new phase, orthorhombic GeSe is found in the thin films after irradiation. The performance of a sensor with an active film of Ge₄₀Se₆₀ is also shown as an example.

View Accepted Manuscript (DOE)

Research Organization:: Idaho National Laboratory (INL), Idaho Falls, ID (United States)

Sponsoring Organization:: USDOE; USDOE Office of Nuclear Energy (NE)

Grant/Contract Number:: AC07-05ID14517; NE0008691

Other Award/Contract Number:: 19-2832

OSTI ID:: 1828143

Alternate ID(s):: OSTI ID: 1786542

Report Number(s):: INL/JOU--20-59346-Rev000

Journal Information:: Physica Status Solidi B. Basic Solid State Physics, Journal Name: Physica Status Solidi B. Basic Solid State Physics Journal Issue: 9 Vol. 258; ISSN 0370-1972

Publisher:: Wiley-BlackwellCopyright Statement

Country of Publication:: United States

Language:: English

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