Response of Integrated Silicon Microwave pin Diodes to X-ray and Fast-Neutron Irradiation

Teng, Jeffrey W.; Nergui, Delgermaa; Parameswaran, Hari; Sepulveda-Ramos, Nelson E.; Tzintzarov, George N.; Mensah, Yaw; Cheon, Clifford D.; Rao, Sunil G.; Ringel, Brett; Gorchichko, Mariia; Li, Kan; Ying, Hanbin; Ildefonso, Adrian; Dodds, Nathaniel A.; Nathan Nowlin, R.; Zhang, En Xia; Fleetwood, Daniel M.; Cressler, John D.

doi:10.1109/tns.2021.3119536

Response of Integrated Silicon Microwave pin Diodes to X-ray and Fast-Neutron Irradiation

Journal Article · Wed Oct 13 00:00:00 EDT 2021 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/tns.2021.3119536· OSTI ID:1827616

Teng, Jeffrey W. ^[1]; Nergui, Delgermaa ^[1]; Parameswaran, Hari ^[1]; Sepulveda-Ramos, Nelson E. ^[1]; Tzintzarov, George N. ^[1]; Mensah, Yaw ^[1]; Cheon, Clifford D. ^[1]; Rao, Sunil G. ^[1]; Ringel, Brett ^[1]; Gorchichko, Mariia ^[2]; Li, Kan ^[2]; Ying, Hanbin ^[3]; Ildefonso, Adrian ^[4]; Dodds, Nathaniel A. ^[5]; Nathan Nowlin, R. ^[5]; Zhang, En Xia ^[2]; Fleetwood, Daniel M. ^[2]; Cressler, John D. ^[1]

Georgia Institute of Technology, Atlanta, GA (United States)
Vanderbilt Univ., Nashville, TN (United States)
Georgia Institute of Technology, Atlanta, GA (United States); HiSilicon Co., Ltd., Guangdong (China)
Naval Research Lab. (NRL), Washington, DC (United States)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Here, integrated silicon microwave pin diodes are exposed to 10-keV X-rays up to a dose of 2 Mrad(SiO₂) and 14-MeV fast neutrons up to a fluence of 2.2×10¹³ cm^-2. Changes in both DC leakage current and small-signal circuit components are examined. Degradation in performance due to total-ionizing dose is shown to be suppressed by non-quasi-static effects during RF operation. Tolerance to displacement damage from fast neutrons is also observed, which is explained using TCAD simulations. Overall, the characterized pin diodes are tolerant to cumulative radiation at levels consistent with space applications such as geosynchronous weather satellites.

View Accepted Manuscript (DOE)

Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: NA0003525

OSTI ID:: 1827616

Report Number(s):: SAND--2021-12550J; 700737

Journal Information:: IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 3 Vol. 69; ISSN 0018-9499

Publisher:: IEEECopyright Statement

Country of Publication:: United States

Language:: English

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42 ENGINEERING
Displacement Damage
Fast Neutron
Radiation
SiGe BiCMOS
Silicon
TCAD
Total Ionizing Dose
X-ray
pin Diode

Response of Integrated Silicon Microwave pin Diodes to X-ray and Fast-Neutron Irradiation

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