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Dynamics of voltage-driven oscillating insulator-metal transitions

Journal Article · · Physical Review B
 [1];  [2];  [2];  [3];  [2];  [4];  [4];  [4];  [3];  [4]
  1. Pennsylvania State Univ., University Park, PA (United States); Penn State University
  2. Draper Lab., Cambridge, MA (United States)
  3. Purdue Univ., West Lafayette, IN (United States)
  4. Pennsylvania State Univ., University Park, PA (United States)
Recent experiments demonstrated emerging alternating insulator and metal phases in Mott insulators actuated by a direct bias voltage, leading to oscillating voltage outputs with characteristic frequencies. Here, we develop a physics-based nonequilibrium model to describe the dynamics of oscillating insulator-metal phase transitions and experimentally validate it using a VO2 device as a prototype. The oscillation frequency is shown to scale monotonically with the bias voltage and series resistance and terminate abruptly at lower and upper device-dependent limits, which are dictated by the nonequilibrium carrier dynamics. Here, we derive an approximate analytical expression for the dependence of the frequency on the device operating parameters, which yields a fundamental limit to the frequency and may be utilized to provide guidance to potential applications of insulator-metal transition materials as building blocks of brain-inspired non-von Neumann computers.
Research Organization:
Pennsylvania State Univ., University Park, PA (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
Grant/Contract Number:
SC0020145
OSTI ID:
1823598
Alternate ID(s):
OSTI ID: 1880820
Journal Information:
Physical Review B, Journal Name: Physical Review B Journal Issue: 6 Vol. 104; ISSN 2469-9950
Publisher:
American Physical Society (APS)Copyright Statement
Country of Publication:
United States
Language:
English

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