Dynamics of voltage-driven oscillating insulator-metal transitions
Journal Article
·
· Physical Review B
- Pennsylvania State Univ., University Park, PA (United States); Penn State University
- Draper Lab., Cambridge, MA (United States)
- Purdue Univ., West Lafayette, IN (United States)
- Pennsylvania State Univ., University Park, PA (United States)
Recent experiments demonstrated emerging alternating insulator and metal phases in Mott insulators actuated by a direct bias voltage, leading to oscillating voltage outputs with characteristic frequencies. Here, we develop a physics-based nonequilibrium model to describe the dynamics of oscillating insulator-metal phase transitions and experimentally validate it using a VO2 device as a prototype. The oscillation frequency is shown to scale monotonically with the bias voltage and series resistance and terminate abruptly at lower and upper device-dependent limits, which are dictated by the nonequilibrium carrier dynamics. Here, we derive an approximate analytical expression for the dependence of the frequency on the device operating parameters, which yields a fundamental limit to the frequency and may be utilized to provide guidance to potential applications of insulator-metal transition materials as building blocks of brain-inspired non-von Neumann computers.
- Research Organization:
- Pennsylvania State Univ., University Park, PA (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- Grant/Contract Number:
- SC0020145
- OSTI ID:
- 1823598
- Alternate ID(s):
- OSTI ID: 1880820
- Journal Information:
- Physical Review B, Journal Name: Physical Review B Journal Issue: 6 Vol. 104; ISSN 2469-9950
- Publisher:
- American Physical Society (APS)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
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