Fabrication of Poly-Si on Locally Etched SiOx as Passivating Contacts for c-Si Solar Cells
Conference
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OSTI ID:1823452
Proof-of-concept for polysilicon on locally etched oxide (PLEO) contacts. Room temperature approach (via MACE) to engineer pinholes decouples charge-carrier transport across contact from passivation scheme of choice. 19 and 17% PLEO devices fabricated on double-side textured and saw-damage etched n Cz wafers, respectively. Preliminary work on polysilicon on locally etched nitride/oxide (PLENO) contacts. 0.2 fA/cm2 achieved with p PLENO; contact displays Ohmic behavior but still very resistive due to low pinhole density.
- Research Organization:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
- DOE Contract Number:
- AC36-08GO28308
- OSTI ID:
- 1823452
- Report Number(s):
- NREL/PR-5900-80273; MainId:42476; UUID:f391ed17-87fb-4626-958d-f184bbf569bf; MainAdminID:62950
- Country of Publication:
- United States
- Language:
- English
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