Band Engineering of Large-Twist-Angle Graphene/h-BN Moiré Superlattices with Pressure

Gao, Yang; Lin, Xianqing; Smart, Thomas; Ci, Penghong; Watanabe, Kenji; Taniguchi, Takashi; Jeanloz, Raymond; Ni, Jun; Wu, Junqiao

doi:10.1103/physrevlett.125.226403

Band Engineering of Large-Twist-Angle Graphene/h-BN Moiré Superlattices with Pressure

Journal Article · Wed Nov 25 00:00:00 EST 2020 · Physical Review Letters

DOI:https://doi.org/10.1103/physrevlett.125.226403· OSTI ID:1823400

^[1]; ^[2]; Smart, Thomas ^[3]; Ci, Penghong ^[4]; ^[5]; Taniguchi, Takashi ^[6]; Jeanloz, Raymond ^[3]; Ni, Jun ^[7]; ^[4]

Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Zhejiang Univ., Hangzhou (China)
Zhejiang Univ. of Technology, Hangzhou (China)
Univ. of California, Berkeley, CA (United States)
Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
National Institute for Materials Science (NIMS), Tsukuba (Japan). Research Center for Functional Materials
National Institute for Materials Science (NIMS), Tsukuba (Japan). International Center for Materials Nanoarchitectonics
Tsinghua Univ., Bejing (China). State Key Lab. of Low-Dimensional Quantum Physics and Frontier Science Center for Quantum Information

Graphene interfacing hexagonal boron nitride (h-BN) forms lateral moiré superlattices that host a wide range of new physical effects such as the creation of secondary Dirac points and band gap opening. A delicate control of the twist angle between the two layers is required as the effects weaken or disappear at large twist angles. In this Letter, we show that these effects can be reinstated in large-angle (~1.8°) graphene/h-BN moiré superlattices under high pressures. Additionally, a graphene/h-BN moiré superlattice microdevice is fabricated directly on the diamond culet of a diamond anvil cell, where pressure up to 8.3 GPa is applied. The band gap at the primary Dirac point is opened by 40-60 meV, and fingerprints of the second Dirac band gap are also observed in the valence band. Theoretical calculations confirm the band engineering with pressure in large-angle graphene/h-BN bilayers.

View Accepted Manuscript (DOE)

Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: CREST; JSPS KAKENHI; MEXT; National Key R&D Program of China; National Natural Science Foundation of China (NSFC); National Science Foundation (NSF); USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC02-05CH11231; NA0003842

OSTI ID:: 1823400

Journal Information:: Physical Review Letters, Journal Name: Physical Review Letters Journal Issue: 22 Vol. 125; ISSN 0031-9007

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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