Gapped Nearly Free-Standing Graphene on an SiC(0001) Substrate Induced by Manganese Atoms

Journal Article · Sun Sep 30 00:00:00 EDT 2018 · Applied Science and Convergence Technology

DOI:https://doi.org/10.5757/asct.2018.27.5.90· OSTI ID:1822855

Hwang, Jinwoong ^[1]; Lee, Ji-Eun ^[1]; Kang, Minhee ^[1]; Park, Byeong-Gyu ^[2]; Denlinger, Jonathan ^[3]; Mo, Sung-Kwan ^[3]; Hwang, Choongyu ^[1]

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1. Pusan National Univ., Busan (Korea, Republic of)
2. Pohang Univ. of Science and Technology, Pohang (Korea, Republic of)
3. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

The electron band structure of manganese-adsorbed graphene on an SiC(0001) substrate has been studied using angle-resolved photoemission spectroscopy. Upon introducing manganese atoms, the conduction band of graphene, that is observed in pristine graphene indicating intrinsic electron-doping by the substrate, completely disappears and the valence band maximum is observed at 0.4 eV below Fermi energy. At the same time, the slope of the valence band decreases by the presence of manganese atoms, approaching the electron band structure calculated using the local density approximation method. The former provides experimental evidence of the formation of nearly free-standing graphene on an SiC substrate, concomitant with a metal-to-insulator transition. The latter suggests that its electronic correlations are efficiently screened, suggesting that the dielectric property of the substrate is modified by manganese atoms and indicating that electronic correlations in grpahene can also be tuned by foreign atoms. These results pave the way for promising device application using graphene that is semiconducting and charge neutral.

• Research Organization: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
• Sponsoring Organization: USDOE Office of Science (SC), Basic Energy Sciences (BES)
• Grant/Contract Number: AC02-05CH11231
• OSTI ID: 1822855
• Journal Information: Applied Science and Convergence Technology, Journal Name: Applied Science and Convergence Technology Journal Issue: 5 Vol. 27; ISSN 2288-6559
• Publisher: The Korean Vacuum Society
• Country of Publication: United States
• Language: English

Related Subjects

74 ATOMIC AND MOLECULAR PHYSICS
ARPES
SiC
angle-resolved photoemission spectroscopy
free-standing
graphene
manganese
metal-to-insulator transition