Interface and optical properties of Zn1-xMgxO films with Mg content of more than 70% grown on the (1$$\bar{2}$$10)-ZnO substrates
- Xiamen University, Xiamen (China)
- Shandong Univ., Jinan (China)
- Xiamen University, Xiamen (China); Xiamen University Malaysia, Sepang, Selangor (Malaysia)
- Brookhaven National Lab. (BNL), Upton, NY (United States). Center for Functional Nanomaterials (CFN)
Fabricating Zn1-xMgxO films with a high Mg content is key to their applications in deep-ultraviolet optoelectronic devices. In this work, we report the preparation of Zn1-xMgxO films on ($$1\bar{2}10$$)-ZnO substrates by molecular beam epitaxy. The Zn1-xMgxO/($$1\bar{2}10$$)-ZnO structure is revealed by x-ray diffraction and high-resolution transmission electron microscopy. Remarkably, no cubic MgO is observed for films with 74.6% Mg content; the film shows mainly the wurtzite structure with some intermediate phases at the interface. Photoluminescence spectra show that the film exhibits good optoelectronic properties with a bandgap of 4.6 eV. This work provides a new avenue for the fabrication of deep-ultraviolet Zn1-xMgxO films.
- Research Organization:
- Brookhaven National Laboratory (BNL), Upton, NY (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- Grant/Contract Number:
- SC0012704
- OSTI ID:
- 1822332
- Report Number(s):
- BNL-222151-2021-JAAM; TRN: US2214599
- Journal Information:
- AIP Advances, Vol. 11, Issue 7; ISSN 2158-3226
- Publisher:
- American Institute of Physics (AIP)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
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