Surface and interface structures of epitaxial Sb2Se3 on mica
Journal Article
·
· Applied Surface Science
- Rensselaer Polytechnic Inst., Troy, NY (United States); Rensselaer Polytechnic Inst., Troy, NY (United States). Center for Materials, Devices and Integrated Systems
- Rensselaer Polytechnic Inst., Troy, NY (United States)
- Harvard Univ., Cambridge, MA (United States). Rowland Inst.
- Brookhaven National Lab. (BNL), Upton, NY (United States). Center for Functional Nanomaterials (CFN)
Sb2Se3 thin film is an emerging photon absorber used in solar cells. We report the study of surface and interface structures of Sb2Se3(1 2 0) film grown on mica substrate by a high-rate vapor transport method. The interface epitaxial relationship between Sb2Se3 and mica examined by the cross- sectional TEM images and diffraction patterns along the [0 0 1] and [10] directions of Sb2Se3 reveal a rectangular structure with lengths of 4.03 ± 0.1 Å and 5.29 ± 0.1 Å, consistent with the [1 2 0] out-of-plane direction of Sb2Se3 bulk lattice parameters. In contrast, the two-dimensional reciprocal space map (2D map) constructed from azimuthal reflection high-energy electron diffraction (ARHEED) patterns from the surface exhibits a decorated hexagonal structure. This surface structure emerges from six epitaxial orientation domains/rods and each domain has a rectangular unit mesh of 3.94 ± 0.09 Å and 26.95 ± 1.16 Å along the [0 0 1] and [10] directions. The 26.95 Å is consistent with the unit mesh of the outermost layer of the Sb2Se3(1 2 0) domains/rods. Overall, our 2D map reveals surface information that are not easily observed by other diffraction techniques.
- Research Organization:
- Brookhaven National Laboratory (BNL), Upton, NY (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- Grant/Contract Number:
- SC0012704
- OSTI ID:
- 1822331
- Report Number(s):
- BNL--222149-2021-JAAM
- Journal Information:
- Applied Surface Science, Journal Name: Applied Surface Science Vol. 567; ISSN 0169-4332
- Publisher:
- ElsevierCopyright Statement
- Country of Publication:
- United States
- Language:
- English
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