Changes in Hydrogen Concentration and Defect State Density at the Poly-Si/SiOx/c-Si Interface Due to Firing

Hollemann, Christina; Folchert, Nils; Harvey, Steven P.; Stradins, Paul; Young, David L.; Lima Salles de Souza, Caroline; Rienäcker, Michael; Haase, Felix; Brendel, Rolf; Peibst, Robby

doi:10.1016/j.solmat.2021.111297

Changes in Hydrogen Concentration and Defect State Density at the Poly-Si/SiOx/c-Si Interface Due to Firing

Journal Article · Thu Jul 29 04:00:00 EDT 2021 · Solar Energy Materials and Solar Cells

DOI:https://doi.org/10.1016/j.solmat.2021.111297· OSTI ID:1821901

Hollemann, Christina; Folchert, Nils; ; Stradins, Paul; Young, David L.; Lima Salles de Souza, Caroline; Rienäcker, Michael; Haase, Felix; Brendel, Rolf; Peibst, Robby

We determined the density of defect states of poly-Si/SiOx/c-Si junctions featuring a wet chemical interfacial oxide from lifetime measurements using the MarcoPOLO model to calculate recombination and contact resistance in poly-Si/SiOx/c-Si-junctions. In samples that did not receive any hydrogen treatment, the Dit,cSi is about 2 × 1012 cm-2 eV1 before firing and rises to 3–7 × 1012 cm2 eV1 during firing at measured peak temperatures between 620 °C and 863 °C. To address the question of why AlOx/SiNy stacks in contrast to pure SiNy layers for hydrogenation during firing provides better passivation quality, we have measured the hydrogen concentrations at the poly-Si/SiOx/c-Si interface as a function of AlOx layer thickness and compared these to J0 and calculated Dit,c-Si values. We observe an increase of the hydrogen concentration at the SiOx/c-Si interface upon firing as a function of the firing temperature that exceeds the defect concentrations at the interface several times. However, the AlOx layer thickness appears to cause an increase in hydrogen concentration at the SiOx/c-Si interface in these samples rather than exhibiting a hydrogen blocking property.

Research Organization:: National Renewable Energy Laboratory (NREL), Golden, CO (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)

DOE Contract Number:: AC36-08GO28308

OSTI ID:: 1821901

Report Number(s):: NREL/JA-5900-80027; MainId:42230; UUID:5071af82-bb1c-4c40-aa9e-7df62d799486; MainAdminID:62883

Journal Information:: Solar Energy Materials and Solar Cells, Journal Name: Solar Energy Materials and Solar Cells Vol. 231

Country of Publication:: United States

Language:: English

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Changes in Hydrogen Concentration and Defect State Density at the Poly-Si/SiOx/c-Si Interface Due to Firing

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